부품 번호 제조업체 / 브랜드 간단한 설명 부품 상태다이오드 유형전압 - 직류 역전 (Vr) (최대)전류 - 평균 정류 (Io)전압 - 순방향 (Vf) (최대) @ If속도역 회복 시간 (trr)전류 - Vr의 역 누설커패시턴스 @ Vr, F실장 형패키지 / 케이스공급 업체 장치 패키지작동 온도 - 정션
Rohm Semiconductor DIODE SC SCHKY 650V 8A TO220ACP ActiveSilicon Carbide Schottky650V8A (DC)1.5V @ 8ANo Recovery Time > 500mA (Io)0ns40µA @ 650V400pF @ 1V, 1MHzThrough HoleTO-220-2
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175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 12A DO203AA ActiveStandard200V12A1.35V @ 12AStandard Recovery >500ns, > 200mA (Io)
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2mA @ 200V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 200°C
Infineon Technologies DIODE SCHOTTKY 650V 10A TO247-3 ActiveSilicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns180µA @ 650V300pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
Rohm Semiconductor DIODE SCHOTTKY 650V 6A TO-220-2 ActiveSilicon Carbide Schottky650V6A (DC)1.55V @ 6ANo Recovery Time > 500mA (Io)0ns120µA @ 600V219pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 16A DO203AA ActiveStandard400V16A1.23V @ 50AStandard Recovery >500ns, > 200mA (Io)
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12mA @ 400V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Infineon Technologies DIODE SCHOTTKY 650V 16A TO247-3 ActiveSilicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 25A DO203AA ActiveStandard1000V25A1.3V @ 78AStandard Recovery >500ns, > 200mA (Io)
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12mA @ 1000V
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 3A AXIAL ActiveStandard200V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 200V
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Through HoleAxialB, Axial-65°C ~ 175°C
Phoenix Contact DIODE MODULE 120-230VAC IN Active
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Pluggable into DIN Rail BaseModuleModule
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STMicroelectronics DIODE SCHOTTKY 1.2KV 15A TO220AC ActiveSilicon Carbide Schottky1200V15A1.5V @ 15ANo Recovery Time > 500mA (Io)0ns90µA @ 1200V1200pF @ 0V, 1MHzThrough HoleTO-220-2TO-220AC-40°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 1.2KV 10A TO247 ActiveSilicon Carbide Schottky1200V10A (DC)1.5V @ 10ANo Recovery Time > 500mA (Io)0ns
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Through HoleTO-247-2TO-247
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Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 16A DO203AA ActiveStandard, Reverse Polarity1200V16A1.23V @ 50AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 25A DO203AA ActiveStandard, Reverse Polarity1200V25A1.3V @ 78AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 25A DO203AA ActiveStandard1200V25A1.3V @ 78AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 70A DO203AB ActiveStandard1200V70A1.35V @ 220AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB (DO-5)-65°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.4KV 70A DO203AB ActiveStandard1400V70A1.46V @ 220AStandard Recovery >500ns, > 200mA (Io)
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4.5mA @ 1400V
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.4KV 70A DO203AB ActiveStandard1400V70A1.46V @ 220AStandard Recovery >500ns, > 200mA (Io)
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4.5mA @ 1400V
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB-65°C ~ 150°C
Central Semiconductor Corp DIODE SCHOTTKY 650V 10A DPAK ActiveSilicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns125µA @ 650V325pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 175°C
Cree/Wolfspeed ZRECTM 15A 1200V SIC SCHOTTKY DI ActiveSilicon Carbide Schottky1200V39A (DC)1.8V @ 15ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V1.2nF @ 0V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 70A DO203AB ActiveStandard1200V70A1.35V @ 220AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB (DO-5)-65°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY 45V 120A D-67 ActiveSchottky45V120A630mV @ 120AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 45V5200pF @ 5V, 1MHzChassis MountD-67 HALF-PAKD-67
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Cree/Wolfspeed ZRECTM 20A 1200V SIC SCHOTTKY DI ActiveSilicon Carbide Schottky1200V54A (DC)1.8V @ 20ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V1.5nF @ 0V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 85A DO203AB ActiveStandard, Reverse Polarity1200V85A1.2V @ 267AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB (DO-5)-65°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 40A D-55 ActiveStandard400V40A
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Standard Recovery >500ns, > 200mA (Io)
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15mA @ 400V
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Chassis MountD-55 T-ModuleD-55
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Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 70A D-55 ActiveStandard400V70A
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Standard Recovery >500ns, > 200mA (Io)
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15mA @ 400V
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Chassis MountD-55 T-ModuleD-55
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SMC Diode Solutions DIODE SCHOTTKY 30V 120A PRM1-1 ActiveSchottky30V120A490mV @ 120AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 30V7400pF @ 5V, 1MHzChassis MountHALF-PAKPRM1-1 (Half Pak Module)-55°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 30V 120A PRM1-1 ActiveSchottky30V120A490mV @ 120AFast Recovery =< 500ns, > 200mA (Io)
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10mA @ 30V7400pF @ 5V, 1MHzChassis MountHALF-PAKPRM1-1 (Half Pak Module)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GP 1000V 150A DO-8 ActiveStandard1000V150A1.47V @ 600AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-205AA, DO-8, StudDO-205AA (DO-8)-40°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE GP 1200V 150A DO-8 ActiveStandard, Reverse Polarity1200V150A1.47V @ 600AStandard Recovery >500ns, > 200mA (Io)
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Chassis, Stud MountDO-205AA, DO-8, StudDO-205AA (DO-8)-40°C ~ 180°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 85A D-55 ActiveStandard600V85A
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Fast Recovery =< 500ns, > 200mA (Io)200ns20mA @ 600V
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Chassis MountD-55 T-ModuleD-55
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Vishay Semiconductor Diodes Division DIODE SCHOTTKY 150V 240A HALFPAK ActiveSchottky150V240A1.21V @ 240AFast Recovery =< 500ns, > 200mA (Io)
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6mA @ 150V6000pF @ 5V, 1MHzChassis MountD-67 HALF-PAKHALF-PAK-55°C ~ 175°C
Micro Commercial Co 100A1200VFRED MODULES F2 PACK ActiveStandard1200V100A1.58V @ 100AFast Recovery =< 500ns, > 200mA (Io)135ns1mA @ 1200V
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Chassis MountF2 ModuleF2-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 2KV 200A DO205 ActiveStandard2000V200A1.4V @ 630AStandard Recovery >500ns, > 200mA (Io)
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15mA @ 2000V
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Stud MountDO-205AC, DO-30, StudDO-205AC (DO-30)-40°C ~ 180°C
Sensata-Crydom DIODE GEN PURP 1.2KV 55A MODULE Not For New DesignsStandard1200V55A (DC)1.4V @ 165AStandard Recovery >500ns, > 200mA (Io)
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Chassis MountModuleModule
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Infineon Technologies DIODE MODULE 1800V 600A Active
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Chassis MountModuleModule
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ON Semiconductor DIODE GEN PURP 75V 300MA DO35 ObsoleteStandard75V300mA1V @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 100V 200MA DO35 ActiveStandard100V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 100V 200MA DO35 ActiveStandard100V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35150°C (Max)
Nexperia USA Inc. DIODE GEN PURP 100V 215MA SOD123 ActiveStandard100V215mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V1.5pF @ 0V, 1MHzSurface MountSOD-123SOD-123150°C (Max)
Micro Commercial Co DIODE GEN PURP 100V 200MA DO35 ObsoleteStandard100V200mA1V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V
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Through HoleDO-204AH, DO-35, AxialDO-35-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 100V 200MA SOT23 ActiveStandard100V200mA (DC)1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 50V 200MA DO35 ActiveStandard50V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
SMC Diode Solutions DIODE GP 75V 300MA MINIMELF ActiveStandard75V300mA (DC)1V @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns5µA @ 75V4pF @ 0V, 1MHzSurface MountDO-213AAMini MELF/DL-35-65°C ~ 175°C
Nexperia USA Inc. DIODE GEN PURP 75V 200MA DO34 ActiveStandard75V200mA (DC)1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns25nA @ 20V4pF @ 0V, 1MHzThrough HoleDO-204AG, DO-34, AxialDO-34200°C (Max)
Nexperia USA Inc. DIODE GEN PURP 75V 200MA DO34 ActiveStandard75V200mA (DC)1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns25nA @ 20V4pF @ 0V, 1MHzThrough HoleDO-204AG, DO-34, AxialDO-34200°C (Max)
Nexperia USA Inc. DIODE GEN PURP 75V 200MA DO34 ActiveStandard75V200mA (DC)1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns25nA @ 20V4pF @ 0V, 1MHzThrough HoleDO-204AG, DO-34, AxialDO-34200°C (Max)
ON Semiconductor DIODE GEN PURP 120V 200MA SOT23 ActiveStandard120V200mA (DC)1.25V @ 200mASmall Signal =< 200mA (Io), Any Speed50ns100nA @ 100V5pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 100V 500MA DO35 ActiveStandard100V500mA1V @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns25nA @ 20V2pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35175°C (Max)
ON Semiconductor DIODE GEN PURP 120V 200MA SOT23 ActiveStandard120V200mA (DC)1.25V @ 200mASmall Signal =< 200mA (Io), Any Speed50ns100nA @ 100V5pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)-55°C ~ 150°C
Nexperia USA Inc. DIODE GEN PURP 200V 225MA SOD123 ActiveStandard200V225mA (DC)1.25V @ 200mAFast Recovery =< 500ns, > 200mA (Io)50ns100nA @ 200V2pF @ 0V, 1MHzSurface MountSOD-123SOD-123150°C (Max)