品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Microchip Technology IC MOSFET DVR 4.5A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4AInverting, Non-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC