Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Microchip Technology IC MOSFET DVR 4.5A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4AInverting, Non-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC