Numero di parte Produttore / Marca Breve descrizione Stato parteConfigurazione guidataTipo di canaleNumero di driverGate TypeTensione - FornituraTensione logica - VIL, VIHCorrente - Uscita picco (sorgente, lavello)Tipo di inputTensione lato alto - Max (Bootstrap)Rise / Fall Time (Typ)temperatura di esercizioTipo di montaggioPacchetto / casoPacchetto dispositivo fornitore
Microchip Technology IC MOSFET DVR 4.5A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4ANon-Inverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.0A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4A, 4AInverting, Non-Inverting
-
15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC