Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - SSL32HM6G SSL33HM6G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
SSL32HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB	Active	Schottky	20V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL33HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Active	Schottky	30V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL34HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AB	Active	Schottky	40V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SF43G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 4A DO201AD	Active	Standard	150V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF44G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF43G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 4A DO201AD	Active	Standard	150V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF44G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF43G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 4A DO201AD	Active	Standard	150V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF44G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S12GC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB	Not For New Designs	Standard	400V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12JC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A DO214AB	Not For New Designs	Standard	600V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12KC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 12A DO214AB	Not For New Designs	Standard	800V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S12MC M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 12A DO214AB	Not For New Designs	Standard	-	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK52CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AB	Active	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK54CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AB	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK55CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AB	Active	Schottky	50V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK59BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AA	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SF45G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF45G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF45G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD	Active	Standard	300V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF46G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO201AD	Active	Standard	400V	4A	1.3V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S15KCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 15A DO214AB	Active	Standard	800V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15MCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A DO214AB	Active	Standard	-	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF41GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR802 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO201AD	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR803 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO201AD	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR804 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SK515BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AA	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SF41GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR802 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO201AD	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR803 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO201AD	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR804 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SF41GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR802 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO201AD	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR803 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 8A DO201AD	Active	Schottky	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR804 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD	Active	Schottky	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SF47G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 4A DO201AD	Active	Standard	500V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF48G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF47G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 4A DO201AD	Active	Standard	500V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF48G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF47G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 4A DO201AD	Active	Standard	500V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF48G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.7V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
S15GCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 15A DO214AB	Active	Standard	400V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S15JCHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 15A DO214AB	Active	Standard	600V	15A	1.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK510C M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AB	Not For New Designs	Schottky	100V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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