Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - SK510BHM4G ES3F V7G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
SK510BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AA	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3F V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Active	Standard	300V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS315 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AB	Not For New Designs	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3GHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR340S M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SK515B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AA	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
TSPB5H100S S2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A SMPC4.0	Active	Schottky	100V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H120S S2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 5A SMPC4.0	Active	Schottky	120V	5A	740mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H150S S2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A SMPC4.0	Active	Schottky	150V	5A	840mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
UG54GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG56GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG54GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG56GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG54GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO201AD	Active	Standard	200V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG56GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO201AD	Active	Standard	400V	5A	1.55V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
UG58GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES3JHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Not For New Designs	Standard	200V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5F M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	Not For New Designs	Standard	300V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF41G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF41G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF41G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD	Active	Standard	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF42G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO201AD	Active	Standard	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK59BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 5A DO214AA	Active	Schottky	90V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK53CHM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO214AB	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	Not For New Designs	Standard	400V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	Not For New Designs	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	Not For New Designs	Standard	-	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SSL33 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Not For New Designs	Schottky	30V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SSL34 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AB	Not For New Designs	Schottky	40V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SK510BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AA	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK52C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 5A DO214AB	Not For New Designs	Schottky	20V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK53C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO214AB	Not For New Designs	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK55C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO214AB	Not For New Designs	Schottky	50V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS39HR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AB	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK52C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 20V DO-214AB	Active	Schottky	20V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK53C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 30V DO-214AB	Active	Schottky	30V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK55C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 50V DO-214AB	Active	Schottky	50V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK515BHM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AA	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS320 M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS315 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 150V DO-214AB	Active	Schottky	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS320 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 200V DO-214AB	Active	Schottky	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
31DF4 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
31DF6 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
31DF4 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
31DF6 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C

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