Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - SS310 V6G SS39 V6G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
SS310 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 100V DO-214AB	Active	Schottky	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS39 V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 90V DO-214AB	Active	Schottky	90V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK310AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AC	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK315AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO214AC	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK32BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AA	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK33BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AA	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK34BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO214AA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SK35BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO214AA	Active	Schottky	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK36BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK39BHR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AA	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SR502HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR503HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO201AD	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR504HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO201AD	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR505HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR506HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO201AD	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK320AHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO214AC	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
6A05GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SR503HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO201AD	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR504HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO201AD	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR505HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR506HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO201AD	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR502HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR503HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 5A DO201AD	Active	Schottky	30V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR504HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO201AD	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR505HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 5A DO201AD	Active	Schottky	50V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR506HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO201AD	Active	Schottky	60V	5A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
6A05GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A05GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A R-6	Active	Standard	50V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A10GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 6A R-6	Active	Standard	100V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A20GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A R-6	Active	Standard	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A40GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A R-6	Active	Standard	400V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A60GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A R-6	Active	Standard	600V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
6A80GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 6A R-6	Active	Standard	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
MUR340SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
MUR360SHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SS39HM6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 3A DO214AB	Active	Schottky	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10KCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 10A DO214AB	Active	Standard	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S10MCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 10A DO214AB	Active	Standard	-	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SSL22HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SSL23HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	410mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C

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