Manufacturer Part NumberBSG0810NDIATMA1
Manufacturer / BrandInfineon Technologies
Available Quantity112440 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET 2N-CH 25V 19A/39A 8TISON
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download BSG0810NDIATMA1.pdf

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Part Number
BSG0810NDIATMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
19A, 39A
Rds On (Max) @ Id, Vgs
3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1040pF @ 12V
Power - Max
2.5W
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TISON-8
Weight
Contact us
Application
Email for details
Replacement Part
BSG0810NDIATMA1

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