Diodes - Redresseurs - Simples - Produits à semiconducteurs discrets - 1N4007T-G CDSL4148-G BAS21HMFHT116 1N4148WS-G RVG - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Type de diode	Tension - DC Reverse (Vr) (Max)	Courant - Rectifié moyen (Io)	Tension - Avant (Vf) (Max) @ Si	La vitesse	Temps de récupération inverse (trr)	Courant - Fuite inverse @ Vr	Capacitance @ Vr, F	Type de montage	Paquet / cas	Package de périphérique fournisseur	Température de fonctionnement - Jonction
1N4007T-G	Comchip Technology	DIODE GEN PURP 1KV 1A DO41	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
CDSL4148-G	Comchip Technology	DIODE GEN PURP 75V 150MA SOD80	Active	Standard	75V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
BAS21HMFHT116	Rohm Semiconductor	DIODE GEN PURP 200V 200MA SSD3	Active	Standard	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	2.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SSD3	150°C (Max)
1N4148WS-G RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA SOD323	Active	Standard	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
1N5406G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5407G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO201AD	Active	Standard	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR304 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR306 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO201AD	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR310 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO201AD	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS36 V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 60V DO-214AB	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR315 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD	Active	Schottky	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR320 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO201AD	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N4007B-G	Comchip Technology	DIODE GEN PURP 1KV 1A DO41	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
MUR460S R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO214AB	Not For New Designs	Standard	600V	4A	1.25V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
SF36G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF38G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HER305G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR515 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO201AD	Active	Schottky	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK56CHR7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SF34G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO201AD	Active	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR806 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A DO201AD	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF64G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A DO201AD	Active	Standard	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR420 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO201AD	Active	Standard	200V	4A	890mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
SF66G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 6A DO201AD	Active	Standard	400V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SF68G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A DO201AD	Active	Standard	600V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RFUH10NS4SFHTL	Rohm Semiconductor	FAST RECOVERY DIODES CORRESPOND	Active	Standard	430V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 430V	150pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	LPDS	150°C (Max)
NRVBB1060T4G	ON Semiconductor	DIODE SCHOTTKY 60V 10A D2PAK	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
NBRB8H100T4G	ON Semiconductor	DIODE SCHOTTKY AUTO 8A 100V	Active	Schottky	100V	8A	710mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	600pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
MBRD330G	ON Semiconductor	DIODE SCHOTTKY 30V 3A DPAK	Active	Schottky	30V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-65°C ~ 150°C
LXA08B600	Power Integrations	DIODE GEN PURP 600V 8A TO263AB	Active	Standard	600V	8A	2.94V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	34ns	250µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	150°C (Max)
SF1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AB	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST10L60CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 5A TO220AB	Active	Schottky	60V	5A	650mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
MBR1060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AC	Active	Schottky	60V	10A	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGB8JT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Active	Standard	600V	8A	1.75V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
SFAF504G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A ITO220AC	Active	Standard	200V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
VS-8ETH03-1-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 8A TO262AA	Active	Standard	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262AA	-65°C ~ 175°C
VS-8ETH03S-M3	Vishay Semiconductor Diodes Division	DIODE ULTRA FAST 300V 8A D2PAK	Active	Standard	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
MBRF10200 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 10A ITO220AC	Active	Schottky	200V	10A	1.05V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SBRB1045T4G	ON Semiconductor	DIODE SCHOTTKY 45V 10A D2PAK	Active	Schottky	45V	10A	840mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
TST20U45C C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A TO220AB	Active	Schottky	45V	10A	530mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST20U60C C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AB	Active	Schottky	60V	10A	630mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SRF1060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A ITO220AB	Active	Schottky	60V	10A	700mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
TST10L200CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 10A TO220AB	Active	Schottky	200V	10A	900mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFF1004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A ITO220AB	Active	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
UGF8J C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UG8J C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF508G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC	Active	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
TST20U100C C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO220AB	Active	Schottky	100V	10A	790mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST20L100CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO220AB	Active	Schottky	100V	10A	840mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST20L150CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A TO220AB	Active	Schottky	150V	10A	960mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C

Fabricants pour Diodes - Redresseurs - Simples