Manufacturer Part NumberSIA850DJ-T1-GE3
Manufacturer / BrandVishay Siliconix
Available Quantity108610 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 190V 0.95A SC70-6
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download SIA850DJ-T1-GE3.pdf

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Part Number
SIA850DJ-T1-GE3
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190V
Current - Continuous Drain (Id) @ 25°C
950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
3.8 Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 10V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
90pF @ 100V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.9W (Ta), 7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Dual
Package / Case
PowerPAK® SC-70-6 Dual
Weight
Contact us
Application
Email for details
Replacement Part
SIA850DJ-T1-GE3

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Part Number Manufacturer Description
SIA850DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 190V 0.95A SC70-6