TPC6012(TE85L,F,M) Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | TPC6012(TE85L,F,M) |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 121820 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET N-CH 20V 6A VS6 |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | TPC6012(TE85L,F,M).pdf |
Please fill the below inquiry form, we will reply you the quotation for TPC6012(TE85L,F,M) within 24 hours.
- Part Number
- TPC6012(TE85L,F,M)
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs
- 20 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 5V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 630pF @ 10V
- FET Feature
-
- Power Dissipation (Max)
- 700mW (Ta)
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- VS-6 (2.9x2.8)
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- TPC6012(TE85L,F,M)
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Related Keywords For "TPC601"
| Part Number | Manufacturer | Description |
|---|---|---|
| TPC6010-H(TE85L,FM | Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 |
| TPC6011(TE85L,F,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A VS6 |
| TPC6012(TE85L,F,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 20V 6A VS6 |