Infineon Technologies Distributor - Transistores - FETs, MOSFETs - Single - IPI65R190C6XKSA1 SPI11N60C3XKSA1 - CHIPSIC

Número da peça	Fabricante / Marca	Descrição breve	Status da Parte	Tipo FET	Tecnologia	Tensão de drenagem para fonte (Vdss)	Corrente - Drenagem Contínua (Id) @ 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Capacitância de entrada (Ciss) (Max) @ Vds	FET Feature	Dissipação de energia (máx.)	Temperatura de operação	Tipo de montagem	Pacote de dispositivos de fornecedores	Pacote / Caso
IPI65R190C6XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO262	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	190 mOhm @ 7.3A, 10V	3.5V @ 730µA	73nC @ 10V	±20V	1620pF @ 100V	-	151W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
SPI11N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-262	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	380 mOhm @ 7A, 10V	3.9V @ 500µA	60nC @ 10V	±20V	1200pF @ 25V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I²Pak, TO-262AA
BTS244ZE3062AATMA2	Infineon Technologies	MOSFET N-CH 55V 35A TO220-5	Active	N-Channel	MOSFET (Metal Oxide)	55V	35A (Tc)	4.5V, 10V	13 mOhm @ 19A, 10V	2V @ 130µA	130nC @ 10V	±20V	2660pF @ 25V	Temperature Sensing Diode	170W (Tc)	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO263-5-2	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
AUIRF1404ZL	Infineon Technologies	MOSFET N-CH 40V 160A TO262	Active	N-Channel	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	3.7 mOhm @ 75A, 10V	4V @ 250µA	150nC @ 10V	±20V	4340pF @ 25V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
IPP90R500C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 11A TO-220	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	900V	11A (Tc)	10V	500 mOhm @ 6.6A, 10V	3.5V @ 740µA	68nC @ 10V	±20V	1700pF @ 100V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPI90R500C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 11A TO-262	Active	N-Channel	MOSFET (Metal Oxide)	900V	11A (Tc)	10V	500 mOhm @ 6.6A, 10V	3.5V @ 740µA	68nC @ 10V	±20V	1700pF @ 100V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
IPW90R1K2C3FKSA1	Infineon Technologies	MOSFET N-CH 900V 5.1A TO-247	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	900V	5.1A (Tc)	10V	1.2 Ohm @ 2.8A, 10V	3.5V @ 310µA	28nC @ 10V	±20V	710pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRFSL3206PBF	Infineon Technologies	MOSFET N-CH 60V 120A TO-262	Active	N-Channel	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	3 mOhm @ 75A, 10V	4V @ 150µA	170nC @ 10V	±20V	6540pF @ 50V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
AUIRFB8407	Infineon Technologies	MOSFET N-CH 40V 195A TO220AB	Active	N-Channel	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	2 mOhm @ 100A, 10V	4V @ 150µA	225nC @ 10V	±20V	7330pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRFSL8407	Infineon Technologies	MOSFET N-CH 40V 195A TO262	Active	N-Channel	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	2 mOhm @ 100A, 10V	4V @ 150µA	225nC @ 10V	±20V	7330pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
IPW90R1K0C3FKSA1	Infineon Technologies	MOSFET N-CH 900V 5.7A TO-247	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	900V	5.7A (Tc)	10V	1 Ohm @ 3.3A, 10V	3.5V @ 370µA	34nC @ 10V	±20V	850pF @ 100V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB65R190CFDAATMA1	Infineon Technologies	MOSFET N-CH TO263-3	Active	N-Channel	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	190 mOhm @ 7.3A, 10V	4.5V @ 700µA	68nC @ 10V	±20V	1850pF @ 100V	-	151W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	D²PAK (TO-263AB)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPI120N04S302AKSA1	Infineon Technologies	MOSFET N-CH 40V 120A TO262-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	2.3 mOhm @ 80A, 10V	4V @ 230µA	210nC @ 10V	±20V	14300pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
SPA11N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO220-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	440 mOhm @ 7A, 10V	5V @ 1.9mA	64nC @ 10V	±20V	1200pF @ 25V	-	33W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3 Full Pack
IPC218N04N3X1SA1	Infineon Technologies	MOSFET N-CH 40V 2A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	40V	2A (Tj)	10V	50 mOhm @ 2A, 10V	4V @ 200µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
SIPC08N80C3X1SA2	Infineon Technologies	TRANSISTOR N-CH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI037N08N3GXKSA1	Infineon Technologies	MOSFET N-CH 80V 100A	Active	N-Channel	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.75 mOhm @ 100A, 10V	3.5V @ 155µA	117nC @ 10V	±20V	8110pF @ 40V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
IPB180N10S403ATMA1	Infineon Technologies	MOSFET N-CH TO263-7	Active	N-Channel	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	3.3 mOhm @ 100A, 10V	3.5V @ 180µA	140nC @ 10V	±20V	10120pF @ 25V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D²Pak (6 Leads + Tab)
IRFSL7430PBF	Infineon Technologies	MOSFET N-CH 40V 195A TO262	Active	N-Channel	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	1.2 mOhm @ 100A, 10V	3.9V @ 250µA	460nC @ 10V	±20V	14240pF @ 25V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPP11N60S5XKSA1	Infineon Technologies	LOW POWERLEGACY	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC26N50C3X1SA2	Infineon Technologies	TRANSISTOR N-CH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF1405ZS-7P	Infineon Technologies	MOSFET N-CH 55V 120A D2PAK-7	Active	N-Channel	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4.9 mOhm @ 88A, 10V	4V @ 150µA	230nC @ 10V	±20V	5360pF @ 25V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPB60R199CPAATMA1	Infineon Technologies	MOSFET N-CH TO263-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	199 mOhm @ 9.9A, 10V	3.5V @ 1.1mA	43nC @ 10V	±20V	1520pF @ 100V	-	139W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	D²PAK (TO-263AB)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW65R420CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 8.7A TO247	Active	N-Channel	MOSFET (Metal Oxide)	650V	8.7A (Tc)	10V	420 mOhm @ 3.4A, 10V	4.5V @ 340µA	32nC @ 10V	±20V	870pF @ 100V	-	83.3W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPW60R330P6FKSA1	Infineon Technologies	MOSFET N-CH 600V 12A TO247-3	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	330 mOhm @ 4.5A, 10V	4.5V @ 370µA	22nC @ 10V	±20V	1010pF @ 100V	-	93W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRF1404	Infineon Technologies	MOSFET N-CH 40V 202A TO-220AB	Active	N-Channel	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4 mOhm @ 121A, 10V	4V @ 250µA	196nC @ 10V	±20V	5669pF @ 25V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPI65R150CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 22.4A TO-262	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	650V	22.4A (Tc)	10V	150 mOhm @ 9.3A, 10V	4.5V @ 900µA	86nC @ 10V	±20V	2340pF @ 100V	-	195.3W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I²Pak, TO-262AA
IPP120N06S4H1AKSA2	Infineon Technologies	MOSFET N-CH 60V 120A TO220-3	Active	N-Channel	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	2.4 mOhm @ 100A, 10V	4V @ 200µA	270nC @ 10V	±20V	21900pF @ 25V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AUIRF7738L2TR	Infineon Technologies	MOSFET N-CH 40V 315A DIRECTFET	Active	N-Channel	MOSFET (Metal Oxide)	40V	35A (Ta), 130A (Tc)	10V	1.6 mOhm @ 109A, 10V	4V @ 250µA	194nC @ 10V	±20V	7471pF @ 25V	-	3.3W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L6	DirectFET™ Isometric L6
AUIRF2903Z	Infineon Technologies	MOSFET N-CH 30V 260A TO-220AB	Active	N-Channel	MOSFET (Metal Oxide)	30V	160A (Tc)	10V	2.4 mOhm @ 75A, 10V	4V @ 250µA	240nC @ 10V	±20V	6320pF @ 25V	-	290W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB024N08N5ATMA1	Infineon Technologies	MOSFET N-CH 80V TO263-3	Active	N-Channel	MOSFET (Metal Oxide)	80V	120A (Tc)	6V, 10V	2.4 mOhm @ 100A, 10V	3.8V @ 154µA	123nC @ 10V	±20V	8970pF @ 40V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D²PAK (TO-263AB)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW60R280P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-3	Active	N-Channel	MOSFET (Metal Oxide)	600V	13.8A (Tc)	10V	280 mOhm @ 5.2A, 10V	4.5V @ 430µA	25.5nC @ 10V	±20V	1190pF @ 100V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC60R160C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF200S234	Infineon Technologies	TRENCHMOSFETS	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW50R399CPFKSA1	Infineon Technologies	MOSFET N-CH 560V 9A TO-247	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	560V	9A (Tc)	10V	399 mOhm @ 4.9A, 10V	3.5V @ 330µA	23nC @ 10V	±20V	890pF @ 100V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRF2805	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4.7 mOhm @ 104A, 10V	4V @ 250µA	230nC @ 10V	±20V	5110pF @ 25V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPC218N06N3X7SA1	Infineon Technologies	MV POWER MOS	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI100N10S305AKSA1	Infineon Technologies	MOSFET N-CH 100V 100A TO262-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	5.1 mOhm @ 100A, 10V	4V @ 240µA	176nC @ 10V	±20V	11570pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
AUIRF2804S-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7	Active	N-Channel	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	1.6 mOhm @ 160A, 10V	4V @ 250µA	260nC @ 10V	±20V	6930pF @ 25V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
AUIRF1324	Infineon Technologies	MOSFET N-CH 24V 195A TO220AB	Active	N-Channel	MOSFET (Metal Oxide)	24V	195A (Tc)	10V	1.5 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	±20V	7590pF @ 24V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AUIRF1324S-7P	Infineon Technologies	MOSFET N-CH 24V 240A D2PAK-7	Active	N-Channel	MOSFET (Metal Oxide)	24V	240A (Tc)	-	1 mOhm @ 160A, 10V	4V @ 250µA	252nC @ 10V	-	7700pF @ 19V	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab)
AUIRF3805L	Infineon Technologies	MOSFET N-CH 55V 160A TO262	Active	N-Channel	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	3.3 mOhm @ 75A, 10V	4V @ 250µA	290nC @ 10V	±20V	7960pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
IPT029N08N5ATMA1	Infineon Technologies	MV POWER MOS	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP05CN10NGXKSA1	Infineon Technologies	MOSFET N-CH 100V 100A TO-220	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100V	100A (Tc)	10V	5.4 mOhm @ 100A, 10V	4V @ 250µA	181nC @ 10V	±20V	12000pF @ 50V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPW50R350CPFKSA1	Infineon Technologies	MOSFET N-CH 550V 10A TO247-3	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	550V	10A (Tc)	10V	350 mOhm @ 5.6A, 10V	3.5V @ 370µA	25nC @ 10V	±20V	1020pF @ 100V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPW50R299CPFKSA1	Infineon Technologies	MOSFET N-CH 550V 12A TO247-3	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	550V	12A (Tc)	10V	299 mOhm @ 6.6A, 10V	3.5V @ 440µA	31nC @ 10V	±20V	1190pF @ 100V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
AUIRF2903ZSTRL	Infineon Technologies	MOSFET N-CH 30V 235A D2PAK	Active	N-Channel	MOSFET (Metal Oxide)	30V	160A (Tc)	10V	2.4 mOhm @ 75A, 10V	4V @ 150µA	240nC @ 10V	±20V	6320pF @ 25V	-	231W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF3305	Infineon Technologies	MOSFET N-CH 55V 140A TO220AB	Active	N-Channel	MOSFET (Metal Oxide)	55V	140A (Tc)	10V	8 mOhm @ 75A, 10V	4V @ 250µA	150nC @ 10V	±20V	3650pF @ 25V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IPI60R199CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 16A I2PAK	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	199 mOhm @ 9.9A, 10V	3.5V @ 660µA	43nC @ 10V	±20V	1520pF @ 100V	-	139W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
IPI60R199CPXKSA2	Infineon Technologies	HIGH POWERLEGACY	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

Fabricantes para Transistores - FETs, MOSFETs - Single