부품 번호 제조업체 / 브랜드 간단한 설명 부품 상태FET 유형과학 기술드레인 - 소스 간 전압 (Vdss)전류 - 25 ° C에서 연속 드레인 (Id)Drive Voltage (Max Rds On, Min Rds On)Rds On (최대) @ Id, VgsVgs (th) (최대) @ Id게이트 차지 (Qg) (최대) @ VgsVgs (최대)입력 커패시턴스 (Ciss) (최대) @ VdsFET 기능전력 발산 (최대)작동 온도실장 형공급 업체 장치 패키지패키지 / 케이스
Infineon Technologies MOSFET N-CH 650V 20.2A TO262 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V20.2A (Tc)10V190 mOhm @ 7.3A, 10V3.5V @ 730µA73nC @ 10V±20V1620pF @ 100V
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151W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 650V 11A TO-262 Last Time BuyN-ChannelMOSFET (Metal Oxide)650V11A (Tc)10V380 mOhm @ 7A, 10V3.9V @ 500µA60nC @ 10V±20V1200pF @ 25V
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125W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3-1TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 55V 35A TO220-5 ActiveN-ChannelMOSFET (Metal Oxide)55V35A (Tc)4.5V, 10V13 mOhm @ 19A, 10V2V @ 130µA130nC @ 10V±20V2660pF @ 25VTemperature Sensing Diode170W (Tc)-40°C ~ 175°C (TJ)Surface MountPG-TO263-5-2TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Infineon Technologies MOSFET N-CH 40V 160A TO262 ActiveN-ChannelMOSFET (Metal Oxide)40V160A (Tc)10V3.7 mOhm @ 75A, 10V4V @ 250µA150nC @ 10V±20V4340pF @ 25V
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200W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 900V 11A TO-220 Last Time BuyN-ChannelMOSFET (Metal Oxide)900V11A (Tc)10V500 mOhm @ 6.6A, 10V3.5V @ 740µA68nC @ 10V±20V1700pF @ 100V
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156W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3-1TO-220-3
Infineon Technologies MOSFET N-CH 900V 11A TO-262 ActiveN-ChannelMOSFET (Metal Oxide)900V11A (Tc)10V500 mOhm @ 6.6A, 10V3.5V @ 740µA68nC @ 10V±20V1700pF @ 100V
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156W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 900V 5.1A TO-247 Last Time BuyN-ChannelMOSFET (Metal Oxide)900V5.1A (Tc)10V1.2 Ohm @ 2.8A, 10V3.5V @ 310µA28nC @ 10V±20V710pF @ 100V
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83W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 60V 120A TO-262 ActiveN-ChannelMOSFET (Metal Oxide)60V120A (Tc)10V3 mOhm @ 75A, 10V4V @ 150µA170nC @ 10V±20V6540pF @ 50V
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300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 40V 195A TO220AB ActiveN-ChannelMOSFET (Metal Oxide)40V195A (Tc)10V2 mOhm @ 100A, 10V4V @ 150µA225nC @ 10V±20V7330pF @ 25V
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230W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 40V 195A TO262 ActiveN-ChannelMOSFET (Metal Oxide)40V195A (Tc)10V2 mOhm @ 100A, 10V4V @ 150µA225nC @ 10V±20V7330pF @ 25V
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230W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 900V 5.7A TO-247 Last Time BuyN-ChannelMOSFET (Metal Oxide)900V5.7A (Tc)10V1 Ohm @ 3.3A, 10V3.5V @ 370µA34nC @ 10V±20V850pF @ 100V
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89W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH TO263-3 ActiveN-ChannelMOSFET (Metal Oxide)650V17.5A (Tc)10V190 mOhm @ 7.3A, 10V4.5V @ 700µA68nC @ 10V±20V1850pF @ 100V
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151W (Tc)-40°C ~ 150°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 40V 120A TO262-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)40V120A (Tc)10V2.3 mOhm @ 80A, 10V4V @ 230µA210nC @ 10V±20V14300pF @ 25V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 600V 11A TO220-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V11A (Tc)10V440 mOhm @ 7A, 10V5V @ 1.9mA64nC @ 10V±20V1200pF @ 25V
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33W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 40V 2A SAWN ON FOIL ActiveN-ChannelMOSFET (Metal Oxide)40V2A (Tj)10V50 mOhm @ 2A, 10V4V @ 200µA
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Surface MountSawn on foilDie
Infineon Technologies TRANSISTOR N-CH Active
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Infineon Technologies MOSFET N-CH 80V 100A ActiveN-ChannelMOSFET (Metal Oxide)80V100A (Tc)6V, 10V3.75 mOhm @ 100A, 10V3.5V @ 155µA117nC @ 10V±20V8110pF @ 40V
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214W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH TO263-7 ActiveN-ChannelMOSFET (Metal Oxide)100V180A (Tc)10V3.3 mOhm @ 100A, 10V3.5V @ 180µA140nC @ 10V±20V10120pF @ 25V
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250W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-7-3TO-263-7, D²Pak (6 Leads + Tab)
Infineon Technologies MOSFET N-CH 40V 195A TO262 ActiveN-ChannelMOSFET (Metal Oxide)40V195A (Tc)6V, 10V1.2 mOhm @ 100A, 10V3.9V @ 250µA460nC @ 10V±20V14240pF @ 25V
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375W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies LOW POWERLEGACY Not For New Designs
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Infineon Technologies TRANSISTOR N-CH Active
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Infineon Technologies MOSFET N-CH 55V 120A D2PAK-7 ActiveN-ChannelMOSFET (Metal Oxide)55V120A (Tc)10V4.9 mOhm @ 88A, 10V4V @ 150µA230nC @ 10V±20V5360pF @ 25V
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230W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (7-Lead)TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Infineon Technologies MOSFET N-CH TO263-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V16A (Tc)10V199 mOhm @ 9.9A, 10V3.5V @ 1.1mA43nC @ 10V±20V1520pF @ 100V
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139W (Tc)-40°C ~ 150°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 650V 8.7A TO247 ActiveN-ChannelMOSFET (Metal Oxide)650V8.7A (Tc)10V420 mOhm @ 3.4A, 10V4.5V @ 340µA32nC @ 10V±20V870pF @ 100V
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83.3W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 600V 12A TO247-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)600V12A (Tc)10V330 mOhm @ 4.5A, 10V4.5V @ 370µA22nC @ 10V±20V1010pF @ 100V
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93W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 40V 202A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)40V160A (Tc)10V4 mOhm @ 121A, 10V4V @ 250µA196nC @ 10V±20V5669pF @ 25V
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333W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 650V 22.4A TO-262 Last Time BuyN-ChannelMOSFET (Metal Oxide)650V22.4A (Tc)10V150 mOhm @ 9.3A, 10V4.5V @ 900µA86nC @ 10V±20V2340pF @ 100V
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195.3W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3-1TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 60V 120A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)60V120A (Tc)10V2.4 mOhm @ 100A, 10V4V @ 200µA270nC @ 10V±20V21900pF @ 25V
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250W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-1TO-220-3
Infineon Technologies MOSFET N-CH 40V 315A DIRECTFET ActiveN-ChannelMOSFET (Metal Oxide)40V35A (Ta), 130A (Tc)10V1.6 mOhm @ 109A, 10V4V @ 250µA194nC @ 10V±20V7471pF @ 25V
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3.3W (Ta), 94W (Tc)-55°C ~ 175°C (TJ)Surface MountDIRECTFET L6DirectFET™ Isometric L6
Infineon Technologies MOSFET N-CH 30V 260A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)30V160A (Tc)10V2.4 mOhm @ 75A, 10V4V @ 250µA240nC @ 10V±20V6320pF @ 25V
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290W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 80V TO263-3 ActiveN-ChannelMOSFET (Metal Oxide)80V120A (Tc)6V, 10V2.4 mOhm @ 100A, 10V3.8V @ 154µA123nC @ 10V±20V8970pF @ 40V
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214W (Tc)-55°C ~ 175°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 600V TO247-3 ActiveN-ChannelMOSFET (Metal Oxide)600V13.8A (Tc)10V280 mOhm @ 5.2A, 10V4.5V @ 430µA25.5nC @ 10V±20V1190pF @ 100V
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104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH BARE DIE Active
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Infineon Technologies TRENCHMOSFETS Active
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Infineon Technologies MOSFET N-CH 560V 9A TO-247 Last Time BuyN-ChannelMOSFET (Metal Oxide)560V9A (Tc)10V399 mOhm @ 4.9A, 10V3.5V @ 330µA23nC @ 10V±20V890pF @ 100V
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83W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB Last Time BuyN-ChannelMOSFET (Metal Oxide)55V75A (Tc)10V4.7 mOhm @ 104A, 10V4V @ 250µA230nC @ 10V±20V5110pF @ 25V
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330W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MV POWER MOS Active
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Infineon Technologies MOSFET N-CH 100V 100A TO262-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)100V100A (Tc)10V5.1 mOhm @ 100A, 10V4V @ 240µA176nC @ 10V±20V11570pF @ 25V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MOSFET N-CH 40V 240A D2PAK-7 ActiveN-ChannelMOSFET (Metal Oxide)40V240A (Tc)10V1.6 mOhm @ 160A, 10V4V @ 250µA260nC @ 10V±20V6930pF @ 25V
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330W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (7-Lead)TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Infineon Technologies MOSFET N-CH 24V 195A TO220AB ActiveN-ChannelMOSFET (Metal Oxide)24V195A (Tc)10V1.5 mOhm @ 195A, 10V4V @ 250µA240nC @ 10V±20V7590pF @ 24V
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300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 24V 240A D2PAK-7 ActiveN-ChannelMOSFET (Metal Oxide)24V240A (Tc)
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1 mOhm @ 160A, 10V4V @ 250µA252nC @ 10V
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7700pF @ 19V
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Surface MountD2PAK (7-Lead)TO-263-7, D²Pak (6 Leads + Tab)
Infineon Technologies MOSFET N-CH 55V 160A TO262 ActiveN-ChannelMOSFET (Metal Oxide)55V160A (Tc)10V3.3 mOhm @ 75A, 10V4V @ 250µA290nC @ 10V±20V7960pF @ 25V
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300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies MV POWER MOS Active
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Infineon Technologies MOSFET N-CH 100V 100A TO-220 Not For New DesignsN-ChannelMOSFET (Metal Oxide)100V100A (Tc)10V5.4 mOhm @ 100A, 10V4V @ 250µA181nC @ 10V±20V12000pF @ 50V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 550V 10A TO247-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)550V10A (Tc)10V350 mOhm @ 5.6A, 10V3.5V @ 370µA25nC @ 10V±20V1020pF @ 100V
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89W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 550V 12A TO247-3 Last Time BuyN-ChannelMOSFET (Metal Oxide)550V12A (Tc)10V299 mOhm @ 6.6A, 10V3.5V @ 440µA31nC @ 10V±20V1190pF @ 100V
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104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 30V 235A D2PAK ActiveN-ChannelMOSFET (Metal Oxide)30V160A (Tc)10V2.4 mOhm @ 75A, 10V4V @ 150µA240nC @ 10V±20V6320pF @ 25V
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231W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 55V 140A TO220AB ActiveN-ChannelMOSFET (Metal Oxide)55V140A (Tc)10V8 mOhm @ 75A, 10V4V @ 250µA150nC @ 10V±20V3650pF @ 25V
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330W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220TO-220-3
Infineon Technologies MOSFET N-CH 600V 16A I2PAK Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V16A (Tc)10V199 mOhm @ 9.9A, 10V3.5V @ 660µA43nC @ 10V±20V1520pF @ 100V
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139W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO262-3TO-262-3 Long Leads, I²Pak, TO-262AA
Infineon Technologies HIGH POWERLEGACY Not For New Designs
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