Diodes - Rectifiers - Single - Discrete Semiconductor Products - FFSP15120A 1N5804 1N5416 1N5420 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
FFSP15120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV 15A TO220-2	Active	Silicon Carbide Schottky	1200V	15A (DC)	1.75V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 1200V	936pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
1N5804	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5416	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
SCS215AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 15A TO-220-2	Active	Silicon Carbide Schottky	650V	15A (DC)	1.55V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-HFA16PB120-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A TO247AC	Active	Standard	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	20µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
1N5615US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
LSIC2SD120A08	Littelfuse Inc.	DIODE SIC SCHOTTKY 1200V 8A	Active	Silicon Carbide Schottky	1200V	24.5A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	454pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
FFSH2065A	ON Semiconductor	650V 20A SIC SBD	Active	Silicon Carbide Schottky	650V	25A (DC)	-	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	1085pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A B-MELF	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5550	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
FFSH15120A	ON Semiconductor	1200V 15A SIC SBD	Active	Silicon Carbide Schottky	1200V	26A (DC)	1.75V @ 15A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	936pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
FFSP3065A	ON Semiconductor	DIODE SCHOTTKY 650V 30A TO220-2	Active	Silicon Carbide Schottky	650V	30A (DC)	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 650V	1705pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
1N5619US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
VS-40EPF06-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 40A TO247AC	Active	Standard	600V	40A	1.25V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
1N5807	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 3A B-MELF	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5554	Microsemi Corporation	DIODE GEN PURP 1KV 3A AXIAL	Active	Standard	1000V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
LSIC2SD120A10	Littelfuse Inc.	DIODE SCHOTTKY 1.2KV 28A TO220-2	Active	Silicon Carbide Schottky	1200V	28A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	582pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
CDBJFSC101200-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	780pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
SCS210KGHRC	Rohm Semiconductor	DIODE SCHOTTKY 1200V 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
IDH16G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 16A TO220-2	Active	Silicon Carbide Schottky	1200V	16A (DC)	1.95V @ 16A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	730pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 3A B-MELF	Active	Standard	1000V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
VS-HFA30PB120-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AC	Active	Standard	1200V	30A	4.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	170ns	40µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
LSIC2SD120A15	Littelfuse Inc.	DIODE SIC SCHOTTKY 1200V 15A	Active	Silicon Carbide Schottky	1200V	44A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	920pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
FFSH3065A	ON Semiconductor	650V 30A SIC SBD	Active	Silicon Carbide Schottky	650V	26A (DC)	-	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	1705pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
FFSH20120A	ON Semiconductor	DIODE SCHOTTKY 1.2KV 30A TO247-2	Active	Silicon Carbide Schottky	1200V	30A (DC)	1.75V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1220pF @ 1V, 100KHz	Through Hole	TO-247-2	TO-247-2	-
SCS215KGHRC	Rohm Semiconductor	DIODE SCHOTTKY 1200V 15A TO220-2	Active	Silicon Carbide Schottky	1200V	15A (DC)	1.6V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 1200V	790pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
LSIC2SD120A20	Littelfuse Inc.	DIODE SIC SCHOTTKY 1200V 20A	Active	Silicon Carbide Schottky	1200V	54.5A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	1142pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
FFSH30120A	ON Semiconductor	1200V 30A SIC SBD	Active	Silicon Carbide Schottky	1200V	46A (DC)	-	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1740pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SCS220KGHRC	Rohm Semiconductor	DIODE SCHOTTKY 1200V 20A TO220-2	Active	Silicon Carbide Schottky	1200V	20A (DC)	1.6V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1060pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
FFSH50120A	ON Semiconductor	1200V 50A SIC SBD	Active	Silicon Carbide Schottky	1200V	77A (DC)	-	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	2560pF @ 1V, 100kHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
R5011415XXZT	Powerex Inc.	RECTIFIER 1400V 150A DO-8 REV	Active	Standard, Reverse Polarity	1400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1400V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
R5001415XXZT	Powerex Inc.	RECTIFIER 1400V 150A DO-8 FOR	Active	Standard	1400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1400V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
FS1M-TP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO214AC	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
FS1DE-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A SMAE	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAE	-50°C ~ 150°C
FS1JE-TP	Micro Commercial Co	DIODE GEN PURP 600V 1A SMAE	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAE	-50°C ~ 150°C
CD1206-S01575	Bourns Inc.	DIODE GEN PURP 100V 150MA 1206	Active	Standard	100V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 100V	3pF @ 0V, 100MHz	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
BAV103-TP	Micro Commercial Co	DIODE GP 200V 200MA MINI MELF	Active	Standard	200V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-55°C ~ 150°C
RS1BTR	SMC Diode Solutions	DIODE GEN PURP 100V 1A SMA	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
1N459TR	ON Semiconductor	DIODE GEN PURP 200V 500MA DO35	Active	Standard	200V	500mA	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	-	25nA @ 175V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
BAS20-TP	Micro Commercial Co	DIODE GEN PURP 150V 200MA SOT23	Active	Standard	150V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
1SS417,L3M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC	Active	Schottky	40V	100mA	620mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	15pF @ 0V, 1MHz	Surface Mount	2-SMD, Flat Lead	fSC	125°C (Max)
BAS21WS-TP	Micro Commercial Co	DIODE GEN PURP 250V 200MA SOD323	Active	Standard	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 155°C
MMBD914	ON Semiconductor	DIODE GEN PURP 100V 200MA SOT23	Last Time Buy	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
BAL99-7	Diodes Incorporated	DIODE GEN PURP 75V 300MA SOT23-3	Discontinued at -	Standard	75V	300mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	2.5µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
BAT54T	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOT523	Active	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOT-523	SOT-523	125°C (Max)
BAS16T-TP	Micro Commercial Co	DIODE GEN PURP 85V 75MA SOT523	Active	Standard	85V	75mA (DC)	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	SOT-523	SOT-523	-55°C ~ 150°C
BAS21T-TP	Micro Commercial Co	DIODE GEN PURP 250V 200MA SOT523	Active	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 250V	5pF @ 0V, 1MHz	Surface Mount	SOT-523	SOT-523	-65°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single