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Infineon Technologies |
DIODE GP 1KV 261A BG-PB50ND-1 |
Obsolete | Standard | 1000V | 261A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 1000V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
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WeEn Semiconductors |
DIODE GEN PURP 1.2KV 30A TO220AC |
Active | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 250µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 1.2KV 5A TO220AC |
Active | Standard | 1200V | 5A | 3.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A D2PAK |
Active | Standard | 600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Microsemi Corporation |
DIODE SCHOTTKY 1200V 10A TO247 |
Obsolete | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 630pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1700V 10A TO247 |
Obsolete | Silicon Carbide Schottky | 1700V | 23A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1700V | 1120pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 1.2KV 30A TO247-2 |
Active | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 5A SMC |
Active | Standard | 600V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 64ns | 3µA @ 600V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 800V 8A DPAK |
Active | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | Schottky | 45V | 7A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | 1020pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | Schottky | 45V | 7A | 480mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | 1020pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY P600 |
Obsolete | Schottky | 45V | 6A | 590mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 1290pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 100V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 150V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 600V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 145pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 600V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 145pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 100V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 150V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 200V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP TO220AC |
Obsolete | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AC |
Obsolete | Schottky | 35V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AC |
Obsolete | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AC |
Obsolete | Schottky | 60V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AB |
Obsolete | Schottky | 35V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AB |
Obsolete | Schottky | 45V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AB |
Obsolete | Schottky | 45V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ARRAY TO220AB |
Obsolete | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP TO220AC |
Obsolete | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP TO220AC |
Obsolete | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY |
Obsolete | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DO201AD |
Obsolete | Schottky | 200V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
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Microsemi Corporation |
GLASS AXIAL SWITCHING DIODE |
Active | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
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Microsemi Corporation |
GLASS AXIAL SWITCHING DIODE |
Active | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
SWITCHING |
Active | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
STD RECTIFIER |
Active | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
STD RECTIFIER |
Active | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
STD RECTIFIER |
Active | Standard | 1000V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 150V | 1A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 150V | 1A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 150V | 1A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
UFRFRR |
Active | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |