品番 メーカー/ブランド 簡単な説明 部品ステータスダイオードタイプ電圧 - DC逆(Vr)(最大)電流 - 平均整流(Io)電圧 - フォワード(Vf)(最大)@ If速度逆回復時間(trr)電流 - 逆リーク(Vr)容量Vr、F取付タイプパッケージ/ケースサプライヤデバイスパッケージ動作温度 - ジャンクション
Infineon Technologies DIODE GP 1KV 261A BG-PB50ND-1 ObsoleteStandard1000V261A
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Standard Recovery >500ns, > 200mA (Io)
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200mA @ 1000V
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Chassis MountModuleBG-PB50ND-1-40°C ~ 135°C
WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO220AC ActiveStandard1200V30A3.3V @ 30AFast Recovery =< 500ns, > 200mA (Io)65ns250µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 1.2KV 5A TO220AC ActiveStandard1200V5A3.2V @ 5AFast Recovery =< 500ns, > 200mA (Io)36ns100µA @ 1200V
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Through HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 15A D2PAK ActiveStandard600V15A1.38V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
Microsemi Corporation DIODE SCHOTTKY 1200V 10A TO247 ObsoleteSilicon Carbide Schottky1200V43A (DC)1.8V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 1200V630pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 1700V 10A TO247 ObsoleteSilicon Carbide Schottky1700V23A (DC)1.8V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 1700V1120pF @ 0V, 1MHzThrough HoleTO-247-2TO-247-55°C ~ 175°C
WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO247-2 ActiveStandard1200V30A3.3V @ 30AFast Recovery =< 500ns, > 200mA (Io)65ns250µA @ 1200V
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Through HoleTO-247-2TO-247-2175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A SMC ActiveStandard600V5A1.35V @ 5AFast Recovery =< 500ns, > 200mA (Io)64ns3µA @ 600V
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Surface MountDO-214AB, SMCSMC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 800V 8A DPAK ActiveStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)
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50µA @ 800V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK150°C (Max)
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ObsoleteSchottky45V7A480mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V1020pF @ 4V, 1MHzThrough HoleP600, AxialP600-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ObsoleteSchottky45V7A480mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 45V1020pF @ 4V, 1MHzThrough HoleP600, AxialP600-55°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ObsoleteSchottky40V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ObsoleteSchottky40V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY P600 ObsoleteSchottky45V6A590mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 45V1290pF @ 4V, 1MHzThrough HoleP600, AxialP600-40°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard100V8A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 100V45pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard150V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V175pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard600V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V145pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard600V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V145pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard100V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V85pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard150V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V85pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard200V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V85pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard400V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V85pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard400V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V85pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard600V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE ARRAY GP TO220AC ObsoleteStandard600V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AC ObsoleteSchottky35V10A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 35V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AC ObsoleteSchottky45V10A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 45V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AC ObsoleteSchottky60V10A840mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AB ObsoleteSchottky35V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 35V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AB ObsoleteSchottky45V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AB ObsoleteSchottky45V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY ARRAY TO220AB ObsoleteSchottky60V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Through HoleTO-220-2TO-220AC-65°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP TO220AC ObsoleteStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 800V55pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP TO220AC ObsoleteStandard800V8A1.1V @ 8AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 800V55pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE SCHOTTKY Obsolete
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Vishay Semiconductor Diodes Division DIODE SCHOTTKY Obsolete
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Vishay Semiconductor Diodes Division DIODE SCHOTTKY DO201AD ObsoleteSchottky200V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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60µA @ 200V175pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-40°C ~ 150°C
Microsemi Corporation GLASS AXIAL SWITCHING DIODE ActiveStandard75V200mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed20ns500nA @ 75V4pF @ 0V, 1MHzThrough HoleDO-204AH, DO-35, AxialDO-35 (DO-204AH)-65°C ~ 175°C
Microsemi Corporation GLASS AXIAL SWITCHING DIODE ActiveStandard75V200mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed20ns500nA @ 75V4pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation SWITCHING ActiveStandard50V200mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Surface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation STD RECTIFIER ActiveStandard600V3A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 600V
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Through HoleB, AxialB, Axial-65°C ~ 175°C
Microsemi Corporation STD RECTIFIER ActiveStandard600V3A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 600V
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Surface MountSQ-MELF, ED-5B-65°C ~ 175°C
Microsemi Corporation STD RECTIFIER ActiveStandard1000V3A1.3V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 1000V
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Surface MountSQ-MELF, ED-5B-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard200V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)150ns500nA @ 200V45pF @ 12V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard150V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzThrough HoleA, AxialA, Axial-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard150V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzThrough HoleA, AxialA, Axial-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard150V1A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard150V1A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard150V1A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
Microsemi Corporation UFRFRR ActiveStandard100V3A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 100V60pF @ 10V, 1MHzThrough HoleB, AxialB, Axial-65°C ~ 175°C