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Manufacturers for Diodes - Rectifiers - Single

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
JANTXV1N3595UR-1
 Microsemi Corporation DIODE GP 125V 150MA DO213AA Discontinued at -Standard125V150mA920mV @ 100mASmall Signal =< 200mA (Io), Any Speed3µs2nA @ 125V
-
Surface MountDO-213AADO-213AA-65°C ~ 175°C
JAN1N3600
 Microsemi Corporation DIODE GEN PURP 50V 200MA DO7 Discontinued at -Standard50V200mA (DC)1V @ 200mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
-
Through HoleDO-204AA, DO-7, AxialDO-7-65°C ~ 175°C
JAN1N3644
 Microsemi Corporation DIODE GEN PURP 1.5KV 250MA AXIAL Discontinued at -Standard1500V250mA5V @ 250mAStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 1500V
-
Through HoleS, AxialS, Axial-65°C ~ 175°C
JAN1N3647
 Microsemi Corporation DIODE GEN PURP 3KV 250MA AXIAL Discontinued at -Standard3000V250mA5V @ 250mAStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 1500V
-
Through HoleS, AxialS, Axial-65°C ~ 150°C
JANTXV1N3671A
 Microsemi Corporation DIODE GEN PURP 800V 12A DO203AA ActiveStandard800V12A1.35V @ 38AStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 150°C
JANTX1N3671AR
 Microsemi Corporation DIODE GEN PURP 800V 12A DO203AA ActiveStandard, Reverse Polarity800V12A1.35V @ 38AStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 150°C
JANTX1N3673A
 Microsemi Corporation DIODE GEN PURP 1KV 12A DO203AA Discontinued at -Standard1000V12A1.35V @ 38AStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 150°C
JANTXV1N3673AR
 Microsemi Corporation DIODE GEN PURP 1KV 12A DO203AA ActiveStandard, Reverse Polarity1000V12A1.35V @ 38AStandard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 150°C
JANTX1N3766
 Microsemi Corporation DIODE GEN PURP 800V 35A DO203AB Discontinued at -Standard800V35A2.3V @ 500AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTXV1N3766
 Microsemi Corporation DIODE GEN PURP 800V 35A DO203AB ActiveStandard800V35A1.4V @ 110AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTX1N3766R
 Microsemi Corporation DIODE GEN PURP 800V 35A DO203AB ActiveStandard, Reverse Polarity800V35A2.3V @ 500AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JAN1N3768
 Microsemi Corporation DIODE GEN PURP 1KV 35A DO203AB Discontinued at -Standard1000V35A1.4V @ 110AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTX1N3768
 Microsemi Corporation DIODE GEN PURP 1KV 35A DO203AB ActiveStandard1000V35A2.3V @ 500AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTXV1N3768
 Microsemi Corporation DIODE GEN PURP 1KV 35A DO203AB ActiveStandard1000V35A1.4V @ 110AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTX1N3768R
 Microsemi Corporation DIODE GEN PURP 1KV 35A DO203AB ActiveStandard, Reverse Polarity1000V35A2.3V @ 500AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTXV1N3768R
 Microsemi Corporation DIODE GEN PURP 1KV 35A DO203AB ActiveStandard, Reverse Polarity1000V35A1.4V @ 110AStandard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
-
Chassis, Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 175°C
JANTXV1N4148UB
 Microsemi Corporation DIODE GEN PURP 75V 200MA SMD Discontinued at -Standard75V200mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V4pF @ 0V, 1MHzSurface Mount3-SMD, No LeadUB-65°C ~ 200°C
JANTXV1N4148UB2
 Microsemi Corporation DIODE GEN PURP 75V 200MA SMD Discontinued at -Standard75V200mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)20ns500nA @ 75V4pF @ 0V, 1MHzSurface Mount3-SMD, No LeadUB-65°C ~ 200°C
JANTX1N4458
 Microsemi Corporation DIODE GEN PURP 800V 15A DO203AA ActiveStandard800V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JAN1N4458R
 Microsemi Corporation DIODE GEN PURP 800V 15A DO203AA ActiveStandard, Reverse Polarity800V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JANTX1N4458R
 Microsemi Corporation DIODE GEN PURP 800V 15A DO203AA ActiveStandard, Reverse Polarity800V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 800V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JAN1N4459
 Microsemi Corporation DIODE GEN PURP 1KV 15A DO203AA ActiveStandard1000V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JANTX1N4459
 Microsemi Corporation DIODE GEN PURP 1KV 15A DO203AA ActiveStandard1000V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JAN1N4459R
 Microsemi Corporation DIODE GEN PURP 1KV 15A DO203AA ActiveStandard, Reverse Polarity1000V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JANTX1N4459R
 Microsemi Corporation DIODE GEN PURP 1KV 15A DO203AA ActiveStandard, Reverse Polarity1000V15A1.5V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
50µA @ 1000V
-
Chassis, Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 175°C
JANTXV1N5187
 Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL Discontinued at -Standard100V3A1.5V @ 9AStandard Recovery >500ns, > 200mA (Io)
-
2µA @ 100V
-
Through HoleB, AxialAxial-65°C ~ 175°C
JAN1N5550US
 Microsemi Corporation DIODE GEN PURP 200V 3A B-MELF Discontinued at -Standard200V3A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 200V
-
Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JAN1N5552US
 Microsemi Corporation DIODE GEN PURP 600V 3A B-MELF Discontinued at -Standard600V3A1.2V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 600V
-
Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5554US
 Microsemi Corporation DIODE GEN PURP 1KV 3A B-MELF Discontinued at -Standard1000V3A1.3V @ 9AStandard Recovery >500ns, > 200mA (Io)2µs1µA @ 1000V
-
Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JAN1N6073
 Microsemi Corporation DIODE GEN PURP 50V 850MA AXIAL ActiveStandard50V850mA2.04V @ 9.4AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 50V
-
Through HoleA, AxialA-PAK-65°C ~ 155°C
JANTX1N6081
 Microsemi Corporation DIODE GEN PURP 150V 2A AXIAL Discontinued at -Standard150V2A1.5V @ 37.7AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 150V
-
Through HoleA, AxialA-PAK-65°C ~ 155°C
JANTXV1N6081
 Microsemi Corporation DIODE GEN PURP 150V 2A AXIAL Discontinued at -Standard150V2A1.5V @ 37.7AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 150V
-
Through HoleG, AxialG, Axial-65°C ~ 155°C
JAN1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6620U
 Microsemi Corporation DIODE GEN PURP 200V 1.2A A-MELF ActiveStandard200V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 200V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6621U
 Microsemi Corporation DIODE GEN PURP 400V 1.2A A-MELF ActiveStandard400V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 400V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6621U
 Microsemi Corporation DIODE GEN PURP 400V 1.2A A-MELF ActiveStandard400V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 400V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6622U
 Microsemi Corporation DIODE GEN PURP 600V 1.2A A-MELF ActiveStandard600V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6622U
 Microsemi Corporation DIODE GEN PURP 600V 1.2A A-MELF ActiveStandard600V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6622US
 Microsemi Corporation DIODE GEN PURP 660V 2A D5A ActiveStandard660V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6623
 Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 800V
-
Through HoleA, AxialA-PAK-65°C ~ 150°C
JAN1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 800V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 800V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6623U
 Microsemi Corporation DIODE GEN PURP 800V 1A A-MELF ActiveStandard800V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 800V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6624
 Microsemi Corporation DIODE GEN PURP 900V 1A AXIAL ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 900V
-
Through HoleA, Axial
-
-65°C ~ 150°C
JAN1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 900V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTX1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 900V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6624U
 Microsemi Corporation DIODE GEN PURP 900V 1A A-MELF ActiveStandard900V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 900V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6625
 Microsemi Corporation DIODE GEN PURP 1KV 1A AXIAL ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 1000V
-
Through HoleA, Axial
-
-65°C ~ 150°C
JAN1N6625U
 Microsemi Corporation DIODE GEN PURP 1KV 1A A-MELF ActiveStandard1000V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 1000V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
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