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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO220AC |
Obsolete | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO-220AC |
Obsolete | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A D2PAK |
Obsolete | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO220AC |
Obsolete | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
Obsolete | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
Obsolete | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220AC |
Discontinued at - | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO220AC |
Obsolete | Schottky | 35V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
Obsolete | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 35V TO-220AC |
Obsolete | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 45V TO-220AC |
Obsolete | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
Obsolete | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A TO220AB |
Obsolete | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO262AA |
Discontinued at - | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-220AB |
Obsolete | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 20A TO220AB |
Obsolete | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V TO-220AB |
Obsolete | Schottky | 80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
Obsolete | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
Obsolete | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
Obsolete | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
Obsolete | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
Obsolete | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 50MA DO7 |
Obsolete | Standard | 75V | 50mA | 1V @ 5mA | Small Signal =< 200mA (Io), Any Speed | - | 500µA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -55°C ~ 75°C |
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Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2 |
Obsolete | Silicon Carbide Schottky | 600V | 50A (DC) | 1.65V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 600V | 2635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 17.5A TO252 |
Obsolete | Silicon Carbide Schottky | 1200V | 17.5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO252-2 |
Obsolete | Silicon Carbide Schottky | 600V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 122pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
Obsolete | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO263-2 |
Obsolete | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 477pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
Obsolete | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 487pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1200V 15A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 24A TO247-2 |
Obsolete | Silicon Carbide Schottky | 600V | 24A (DC) | 1.7V @ 24A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 973pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1200V 81A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 81A | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 36A TO247-2 |
Obsolete | Silicon Carbide Schottky | 600V | 36A (DC) | 1.7V @ 36A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1460pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.7V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 2984pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.7KV 20A TO247-2 |
Obsolete | Silicon Carbide Schottky | 1700V | 20A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1700V | 1624pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 175V 100MA DO7 |
Active | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 175V 100MA DO7 |
Active | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50µs | 100nA @ 175V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 300A DO9 |
Active | Standard | 600V | 300A | 1.55V @ 940A | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 100A DO205AA |
Discontinued at - | Standard | 400V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 100A DO205AA |
Active | Standard | 600V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GP 1KV 100A DO205AA |
Discontinued at - | Standard | 1000V | 100A | 1.55V @ 310A | Small Signal =< 200mA (Io), Any Speed | - | 10mA @ 1000V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 12A DO203AA |
Active | Standard | 100V | 12A | 1.5V @ 38A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 12A DO203AA |
Active | Standard | 100V | 12A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 12A DO203AA |
Discontinued at - | Standard | 200V | 12A | 1.5V @ 38A | Standard Recovery >500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
