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ON Semiconductor |
DIODE GEN PURP 200V 15A TO220-2 |
Active | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 45V 30A POWERFLAT |
Active | Schottky | 45V | 30A | 640mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |
|
IXYS |
DIODE GEN PURP 1.2KV 30A TO263 |
Active | Standard | 1200V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1200V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 170V 30A POWRFLAT |
Active | Schottky | 170V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 170V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (6x5) | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 600V 6A D2PAK |
Active | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 15A TO220AC |
Active | Standard | 1200V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 9A TO252-2 |
Active | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
Active | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 600V 2A POWERMITE |
Active | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO252-2 |
Active | Silicon Carbide Schottky | 600V | 13.5A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-F2 |
Active | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | -55°C ~ 175°C |
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2.5A SMB |
Active | Silicon Carbide Schottky | 1200V | 2.5A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO252-2 |
Active | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A DO214AA |
Active | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
|
IXYS |
DIODE GEN PURP 1.2KV 17A TO220AC |
Active | Standard | 1200V | 17A | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-2 |
Active | Silicon Carbide Schottky | 600V | 19A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO263-2 |
Active | Silicon Carbide Schottky | 600V | 19A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 295pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-F2 |
Active | Silicon Carbide Schottky | 600V | 7.5A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220-F2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
Active | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 600V 60A TO247 |
Active | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 150°C |
|
IXYS |
DIODE GEN PURP 1KV 30A TO247AD |
Active | Standard | 1000V | 30A | 2.4V @ 36A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 750µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DOP3I |
Active | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO220-2 |
Active | Silicon Carbide Schottky | 600V | 30A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 32A TO252-2 |
Active | Silicon Carbide Schottky | 650V | 32A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 460.5pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8.2A TO220 |
Active | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 60A TO247AD |
Active | Standard | 600V | 60A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 200µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
Active | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1.2KV 75A TO247 |
Active | Standard | 1200V | 75A | 3.1V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 325ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 150A POWIRTAB |
Active | Standard | 200V | 150A | 1.13V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 50µA @ 200V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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IXYS |
DIODE AVALANCHE 1600V 3.6A AXIAL |
Active | Avalanche | 1600V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 1600V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 150A POWIRTAB |
Active | Standard | 400V | 150A | 1.3V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 93ns | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.2KV 75A TO247AD |
Active | Standard | 1200V | 75A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 3mA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
Active | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
Active | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO252-2 |
Active | Silicon Carbide Schottky | 1200V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.7KV 14.4A TO247 |
Active | Silicon Carbide Schottky | 1700V | 14.4A (DC) | 2V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1700V | 827pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 100A TO247-3 |
Active | Silicon Carbide Schottky | 650V | 100A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 1970pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 1.2KV 300A F2 |
Active | Standard | 1200V | 300A | 1.8V @ 300A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5mA @ 1200V | - | Chassis Mount | F2 Module | F2 | -40°C ~ 150°C |
|
IXYS |
DIODE GEN PURP 1.2KV 453A Y4-M6 |
Active | Standard | 1200V | 453A | 1.96V @ 520A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 24mA @ 1200V | - | Chassis Mount | Y4-M6 | Y4-M6 | -40°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 75V 200MA SOT23-3 |
Active | Standard | 100V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE GEN PURP 200V 225MA SOD123 |
Active | Standard | 200V | 225mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 300MA SOD80 |
Active | Standard | 75V | 300mA (DC) | 1V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -65°C ~ 175°C |
|
Nexperia USA Inc. |
DIODE GEN PURP 100V 215MA SOT23 |
Active | Standard | 100V | 215mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
|
Nexperia USA Inc. |
DIODE GEN PURP 100V 215MA SOT23 |
Active | Standard | 100V | 215mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
|
SMC Diode Solutions |
DIODE GEN PURP 1.3KV 1A DO41 |
Active | Standard | 1300V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1300V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 600MA SOD80 |
Active | Standard | 50V | 600mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 75V 150MA MICROMELF |
Active | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | MicroMELF | 175°C (Max) |
|
Diodes Incorporated |
DIODE GEN PURP 800V 1A DO41 |
Not For New Designs | Standard | 800V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
Diodes Incorporated |
DIODE GEN PURP 75V 200MA SOT23-3 |
Active | Standard | 75V | 200mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
Last Time Buy | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |