Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - MUR1520G STPS3045DJF-TR DSI30-12AS STPS30170DJF-TR - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
MUR1520G	ON Semiconductor	DIODE GEN PURP 200V 15A TO220-2	Active	Standard	200V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
STPS3045DJF-TR	STMicroelectronics	DIODE SCHOTTKY 45V 30A POWERFLAT	Active	Schottky	45V	30A	640mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)	150°C (Max)
DSI30-12AS	IXYS	DIODE GEN PURP 1.2KV 30A TO263	Active	Standard	1200V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 1200V	10pF @ 400V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 175°C
STPS30170DJF-TR	STMicroelectronics	DIODE SCHOTTKY 170V 30A POWRFLAT	Active	Schottky	170V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 170V	-	Surface Mount	8-PowerVDFN	PowerFlat™ (6x5)	150°C (Max)
STPSC606G-TR	STMicroelectronics	DIODE SCHOTTKY 600V 6A D2PAK	Active	Silicon Carbide Schottky	600V	6A	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	75µA @ 600V	375pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
RHRP15120	ON Semiconductor	DIODE GEN PURP 1.2KV 15A TO220AC	Active	Standard	1200V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
C4D02120E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 9A TO252-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	167pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
STTH30L06G-TR	STMicroelectronics	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	1.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
UPR60E3/TR7	Microsemi Corporation	DIODE GEN PURP 600V 2A POWERMITE	Active	Standard	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 600V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
C3D04060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO252-2	Active	Silicon Carbide Schottky	600V	13.5A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	251pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
C3D04060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2	Active	Silicon Carbide Schottky	600V	6A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	251pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220-F2	-55°C ~ 175°C
GB01SLT12-214	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2.5A SMB	Active	Silicon Carbide Schottky	1200V	2.5A	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	10µA @ 1200V	69pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 175°C
C4D02120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 2A TO252-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	167pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
GB02SLT12-214	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A DO214AA	Active	Silicon Carbide Schottky	1200V	2A (DC)	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	131pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
DSEI20-12A	IXYS	DIODE GEN PURP 1.2KV 17A TO220AC	Active	Standard	1200V	17A	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	750µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
C3D06060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO220-2	Active	Silicon Carbide Schottky	600V	19A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	294pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C3D06060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO263-2	Active	Silicon Carbide Schottky	600V	19A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	295pF @ 0V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
C3D06060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO220-F2	Active	Silicon Carbide Schottky	600V	7.5A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	294pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220-F2	-55°C ~ 175°C
VS-30EPH06PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC	Active	Standard	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
FFH60UP60S3	ON Semiconductor	DIODE GEN PURP 600V 60A TO247	Active	Standard	600V	60A	1.7V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	100µA @ 600V	-	Through Hole	TO-247-3	TO-247	-65°C ~ 150°C
DSEI30-10A	IXYS	DIODE GEN PURP 1KV 30A TO247AD	Active	Standard	1000V	30A	2.4V @ 36A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	750µA @ 1000V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
STTH30R06PI	STMicroelectronics	DIODE GEN PURP 600V 30A DOP3I	Active	Standard	600V	30A	1.85V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	25µA @ 600V	-	Through Hole	DOP3I-2 Insulated (Straight Leads)	DOP3I	175°C (Max)
C3D10060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 10A TO220-2	Active	Silicon Carbide Schottky	600V	30A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	480pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C3D10065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 32A TO252-2	Active	Silicon Carbide Schottky	650V	32A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	460.5pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
C4D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8.2A TO220	Active	Silicon Carbide Schottky	1200V	19A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	150µA @ 1200V	390pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
DSEI60-06A	IXYS	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	1.8V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	200µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
VS-80APS12PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 80A TO247AC	Active	Standard	1200V	80A	1.17V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
APT75DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 75A TO247	Active	Standard	1200V	75A	3.1V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	325ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
VS-150EBU02	Vishay Semiconductor Diodes Division	DIODE GP 200V 150A POWIRTAB	Active	Standard	200V	150A	1.13V @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	50µA @ 200V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-55°C ~ 175°C
DSA2-16A	IXYS	DIODE AVALANCHE 1600V 3.6A AXIAL	Active	Avalanche	1600V	3.6A	1.25V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	2mA @ 1600V	-	Through Hole	Axial	Axial	-40°C ~ 180°C
VS-150EBU04	Vishay Semiconductor Diodes Division	DIODE GP 400V 150A POWIRTAB	Active	Standard	400V	150A	1.3V @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	93ns	50µA @ 400V	-	Through Hole	PowerTab™, PowIRtab™	PowIRtab™	-55°C ~ 175°C
DSEI120-12A	IXYS	DIODE GEN PURP 1.2KV 75A TO247AD	Active	Standard	1200V	75A	1.8V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	3mA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
SCS210KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 10A TO220AC	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.6V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
C4D10120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	33A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	754pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C4D10120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO252-2	Active	Silicon Carbide Schottky	1200V	33A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	250µA @ 1200V	754pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
C3D10170H	Cree/Wolfspeed	DIODE SCHOTTKY 1.7KV 14.4A TO247	Active	Silicon Carbide Schottky	1700V	14.4A (DC)	2V @ 10A	No Recovery Time > 500mA (Io)	0ns	60µA @ 1700V	827pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
C5D50065D	Cree/Wolfspeed	DIODE SCHOTTKY 650V 100A TO247-3	Active	Silicon Carbide Schottky	650V	100A (DC)	1.8V @ 50A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	1970pF @ 0V, 1MHz	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C
MF300U12F2-BP	Micro Commercial Co	DIODE GEN PURP 1.2KV 300A F2	Active	Standard	1200V	300A	1.8V @ 300A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5mA @ 1200V	-	Chassis Mount	F2 Module	F2	-40°C ~ 150°C
MEO450-12DA	IXYS	DIODE GEN PURP 1.2KV 453A Y4-M6	Active	Standard	1200V	453A	1.96V @ 520A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	24mA @ 1200V	-	Chassis Mount	Y4-M6	Y4-M6	-40°C ~ 150°C
BAS16LT3G	ON Semiconductor	DIODE GEN PURP 75V 200MA SOT23-3	Active	Standard	100V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 100V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
BAS21GWJ	Nexperia USA Inc.	DIODE GEN PURP 200V 225MA SOD123	Active	Standard	200V	225mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
LL4148-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 300MA SOD80	Active	Standard	75V	300mA (DC)	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	-65°C ~ 175°C
PMBD914,215	Nexperia USA Inc.	DIODE GEN PURP 100V 215MA SOT23	Active	Standard	100V	215mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
PMBD914,235	Nexperia USA Inc.	DIODE GEN PURP 100V 215MA SOT23	Active	Standard	100V	215mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BY133TA	SMC Diode Solutions	DIODE GEN PURP 1.3KV 1A DO41	Active	Standard	1300V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
LL4150GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 600MA SOD80	Active	Standard	50V	600mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	-55°C ~ 175°C
MCL4148-TR3	Vishay Semiconductor Diodes Division	DIODE GP 75V 150MA MICROMELF	Active	Standard	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	175°C (Max)
1N4006-T	Diodes Incorporated	DIODE GEN PURP 800V 1A DO41	Not For New Designs	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
BAS16-7-F	Diodes Incorporated	DIODE GEN PURP 75V 200MA SOT23-3	Active	Standard	75V	200mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
BAT54-D87Z	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOT23-3	Last Time Buy	Schottky	30V	200mA	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C

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