Part Number Manufacturer / Brand Brife Description Part StatusMemory TypeMemory FormatTechnologyMemory SizeClock FrequencyWrite Cycle Time - Word, PageAccess TimeMemory InterfaceVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. ALL IN ONE MCP 280G Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. IC DRAM 24G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR424Gb (768M x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 24G 1866MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR424Gb (768M x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 12G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR412Gb (384M x 32)2133MHz
-
-
-
1.1V-40°C ~ 105°C (TA)
-
-
-
Micron Technology Inc. MLC EMMC/LPDDR3 280G Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. MLC EMMC/LPDDR3 280G Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. IC DRAM 16G PARALLEL 1.2GHZ ObsoleteVolatileDRAMSDRAM - DDR416Gb (4G x 4)1.2GHz
-
-
Parallel1.14 V ~ 1.26 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 105°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 125°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC FLASH 512G MMC ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)
-
-
-
MMC
-
-40°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 933MHZ ActiveVolatileDRAMDRAM1.125Gb (64Mb x 18)933MHz
-
8nsParallel1.28 V ~ 1.42 V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC FLASH 512G MMC ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)
-
-
-
MMC
-
-40°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 24G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR424Gb (768M x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 12G 2133MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR412Gb (384M x 32)2133MHz
-
-
-
1.1V-40°C ~ 125°C (TC)
-
-
-
Micron Technology Inc. IC FLASH 1T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)333MHz
-
-
Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 1T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)333MHz
-
-
Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 128G PARALLEL 167MHZ ActiveNon-VolatileFLASHFLASH - NAND128Gb (16G x 8)167MHz
-
-
Parallel2.7 V ~ 3.6 V-40°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 128G PARALLEL 83MHZ ObsoleteNon-VolatileFLASHFLASH - NAND128Gb (16G x 8)83MHz
-
-
Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 1T PARALLEL 333MHZ ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)333MHz
-
-
Parallel2.5 V ~ 3.6 V0°C ~ 70°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 512G MMC ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)
-
-
-
MMC
-
-40°C ~ 105°C (TA)
-
-
-
Micron Technology Inc. IC FLASH 512G MMC ActiveNon-VolatileFLASHFLASH - NAND512Gb (64G x 8)
-
-
-
MMC
-
-40°C ~ 105°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 32G 2133MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)2133MHz
-
-
-
1.1V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ObsoleteVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)1866MHz
-
-
-
1.1V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)1866MHz
-
-
-
1.1V-40°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (1G x 32)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 32G 1866MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR432Gb (512M x 64)1866MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ObsoleteVolatileDRAMDRAM1.125Gb (32Mb x 36)1200MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ObsoleteVolatileDRAMDRAM1.125Gb (64Mb x 18)1200MHz
-
7.5nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ActiveVolatileDRAMDRAM1.125Gb (32Mb x 36)1200MHz
-
6.67nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 1.125G PARALLEL 1200MHZ ActiveVolatileDRAMDRAM1.125Gb (64Mb x 18)1200MHz
-
6.67nsParallel1.28 V ~ 1.42 V0°C ~ 95°C (TC)
-
-
-
Micron Technology Inc. ALL IN ONE MCP 3264G Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. ALL IN ONE MCP 4352G Obsolete
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 105°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 24G 2133MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR424Gb (384M x 64)2133MHz
-
-
-
1.1V-30°C ~ 105°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 24G 2133MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR424Gb (384M x 64)2133MHz
-
-
-
1.1V-30°C ~ 105°C (TC)
-
-
-
Micron Technology Inc. IC FLASH 2T MMC ActiveNon-VolatileFLASHFLASH - NAND2Tb (256G x 8)
-
-
-
MMC
-
-25°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. ALL IN ONE MCP 4352G Last Time Buy
-
-
-
-
-
-
-
-
-
-
-
-
-
Micron Technology Inc. IC FLASH 1T MMC ActiveNon-VolatileFLASHFLASH - NAND1Tb (128G x 8)
-
-
-
MMC
-
-25°C ~ 85°C (TA)
-
-
-
Micron Technology Inc. IC DRAM 16G 2133MHZ ActiveVolatileDRAMSDRAM - Mobile LPDDR416Gb (512M x 32)2133MHz
-
-
-
1.1V-40°C ~ 125°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 64G 1600MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR464Gb (1G x 64)1600MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-
Micron Technology Inc. IC DRAM 64G 1600MHZ ObsoleteVolatileDRAMSDRAM - Mobile LPDDR464Gb (1G x 64)1600MHz
-
-
-
1.1V-30°C ~ 85°C (TC)
-
-
-