Micron Technology Distributor - Memory - MT29F64G08CBCGBSX-37BES:G MT46V128M4CY-5B:J - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Memory Type	Memory Format	Technology	Memory Size	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Memory Interface	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F64G08CBCGBSX-37BES:G	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT46V128M4CY-5B:J	Micron Technology Inc.	IC DRAM 512M PARALLEL 200MHZ	Active	Volatile	DRAM	SDRAM - DDR	512Mb (128M x 4)	200MHz	15ns	700ps	Parallel	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	-	-	-
MT29RZ4B2DZZHHTB-18I.80F	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, DRAM - LPDDR2	4Gb (128M x 32)(NAND), 2G (64M x 32)(LPDDR2)	533MHz	-	-	Parallel	1.8V	-40°C ~ 85°C (TA)	-	-	-
MT29F8G08ABACAH4-ITS:C	Micron Technology Inc.	IC FLASH 8G PARALLEL FBGA	Obsolete	Non-Volatile	FLASH	FLASH - NAND	8Gb (1G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT41K1G4RG-107:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Obsolete	Volatile	DRAM	SDRAM - DDR3L	4Gb (1G x 4)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT53B128M32D1DS-062 AIT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT53B128M32D1NP-062 AIT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFD12-AATES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G01ABBFD12-AATES:F	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G08ABAFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G08ABBFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G16ABAFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G16ABBFAH4-AATES:F	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT53B128M32D1DS-062 AAT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B128M32D1NP-062 AAT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT41K128M16JT-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT41K256M8DA-125 AUT:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	800MHz	-	13.75ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MT29F8G01ADAFD12-AATES:F	Micron Technology Inc.	IC FLASH 8G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (8G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F8G01ADBFD12-AATES:F	Micron Technology Inc.	IC FLASH 8G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (8G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT29F8G08ADBDAH4-AAT:D	Micron Technology Inc.	IC FLASH 8G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	8Gb (1G x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT40A256M16GE-083E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
MT40A512M8RH-083E AIT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
EDB4432BBBJ-1DAAT-F-D	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	533MHz	-	-	Parallel	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MTFC4GLMDQ-AIT Z	Micron Technology Inc.	IC FLASH 32G MMC LBGA	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	-	-	-	MMC	-	-40°C ~ 85°C (TA)	-	-	-
EDB8132B4PM-1DAT-F-D	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR2	8Gb (256M x 32)	533MHz	-	-	Parallel	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MTFC4GMWDQ-AIT	Micron Technology Inc.	IC FLASH 32G MMC LBGA	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	-	-	-	MMC	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
EDB4064B4PB-1DIT-F-D	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	533MHz	-	-	Parallel	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
MT40A256M16GE-083E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT40A512M8RH-083E AAT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	-	-	-
MT29F128G08CBCEBRT-37B:E	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT53B128M32D1DS-053 AUT:A	Micron Technology Inc.	IC DRAM 4G 1866MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1DS-062 AUT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1NP-062 AUT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	1600MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT25QL01GBBB8E12-0AUT	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	1Gb (128M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QU01GBBB8E12-0AUT	Micron Technology Inc.	IC FLASH 1G SPI 133MHZ 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	1Gb (128M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29AZ5A3CHHWD-18AAT.84F	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2)	533MHz	-	-	Parallel	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	-	-	-
MT41K256M16TW-107 AUT:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 933MHZ	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	933MHz	-	20ns	Parallel	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	-	-	-
EDB4432BBBJ-1DAUT-F-D	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ	Active	Volatile	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	533MHz	-	-	Parallel	1.14 V ~ 1.95 V	-40°C ~ 125°C (TC)	-	-	-
EMF8132A3PB-DV-F-D	Micron Technology Inc.	IC SDRAM LPDDR3 8G NANA FBGA DDP	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT40A256M16GE-083E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (256M x 16)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A512M8RH-083E AUT:B	Micron Technology Inc.	IC DRAM 4G PARALLEL 1.2GHZ	Active	Volatile	DRAM	SDRAM - DDR4	4Gb (512M x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	-40°C ~ 125°C (TC)	-	-	-
MT40A1G8PM-083E:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.2GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MTFC8GACAEDQ-AAT	Micron Technology Inc.	IC FLASH 64G MMC	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	MMC	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MTFC8GACAENS-5M AAT	Micron Technology Inc.	IC FLASH 64G MMC	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	MMC	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MTFC8GACAENS-AAT	Micron Technology Inc.	IC FLASH 64G MMC	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	MMC	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT40A1G16WBU-075E:B	Micron Technology Inc.	IC DRAM 16G PARALLEL 1.33GHZ	Obsolete	Volatile	DRAM	SDRAM - DDR4	16Gb (1G x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8SA-075:E	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A1G8WE-075E:D	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (1G x 8)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT40A512M16LY-075:E	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.33GHZ	Active	Volatile	DRAM	SDRAM - DDR4	8Gb (512M x 16)	1.33GHz	-	-	Parallel	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
MT29F128G08CBCEBJ4-37:E	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-

Manufacturers for Memory