Micron Technology Distributor - Memory - MT41K128M16V89C3WC1 MT41K256M16V00HWC1-N001 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Memory Type	Memory Format	Technology	Memory Size	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Memory Interface	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT41K128M16V89C3WC1	Micron Technology Inc.	DDR3 2G DIE 128MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT41K256M16V00HWC1-N001	Micron Technology Inc.	DDR3 4G DIE 256MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT41K512M16V91AWC1	Micron Technology Inc.	DDR3 8G DIE 512MX16	Last Time Buy	-	-	-	-	-	-	-	-	-	-	-	-	-
MT41K512M8V00HWC1-N001	Micron Technology Inc.	IC DRAM 4G PARALLEL	Active	Volatile	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	-	-	-	Parallel	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT46H32M32LFT68MWC2	Micron Technology Inc.	MOBILE DDR 1G DIE 32MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT46H64M16LFT68MWC2	Micron Technology Inc.	MOBILE DDR 1G DIE 64MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT46H64M32LFT89MWC2-N1004	Micron Technology Inc.	MOBILE DDR 2G DIE 64MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT46V32M16T67A3WC1	Micron Technology Inc.	DDR 512M DIE 32MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT46V64M8T67A3WC1	Micron Technology Inc.	DDR 512M DIE 64MX8	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT47H64M16U88BWC1	Micron Technology Inc.	DDR2 1G DIE 64MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT52L256M32D1V01MWC2	Micron Technology Inc.	LPDDR3 8G DIE 256MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT52L256M32D1V01MWC2 MS	Micron Technology Inc.	LPDDR3 8G DIE 256MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT52L8DBQC-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR3	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B128M32D1Z00NEC2	Micron Technology Inc.	LPDDR4 4G DIE 128MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B128M32D1Z00NWC2	Micron Technology Inc.	LPDDR4 4G DIE 128MX32	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B192M32D1Z0AMWC1	Micron Technology Inc.	LPDDR4 6G DIE 192MX32	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	6Gb (192M x 32)	-	-	-	-	1.1V	0°C ~ 85°C (TC)	-	-	-
MT53B192M32D1Z9AMWC1	Micron Technology Inc.	LPDDR4 6G DIE 192MX32	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	6Gb (192M x 32)	-	-	-	-	1.1V	0°C ~ 85°C (TC)	-	-	-
MT53B256M16D1Z00MWC1	Micron Technology Inc.	LPDDR4 4G DIE 256MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B256M32D1Z01MWC1	Micron Technology Inc.	LPDDR4 8G DIE 256MX32	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B256M32D1Z91MWC1	Micron Technology Inc.	LPDDR4 8G DIE 256MX32	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M16D1Z11MWC1	Micron Technology Inc.	LPDDR4 8G DIE 512MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M16D1Z11MWC2 MS	Micron Technology Inc.	LPDDR4 8G DIE 512MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M16D1Z11NWC1	Micron Technology Inc.	LPDDR4 8G DIE 512MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M32D2DS-053 AAT:E	Micron Technology Inc.	IC DRAM 16G 1866MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	1866MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53B512M64D4NH-062 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	1600MHz	-	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53D1024M32D4DT-046 AAT:E	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA	Obsolete	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT53D1024M32D4DT-046 AUT:E	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	2133MHz	-	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53D384M16D1Z1AMWC1	Micron Technology Inc.	LPDDR4 6G DIE 384MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D4D1ABP-DC	Micron Technology Inc.	LPDDR4 8G X64 UFBGA	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D4DBFL-DC	Micron Technology Inc.	LPDDR4 QDP	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D4DBNW-DC	Micron Technology Inc.	LPDDR4 8G QDP	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M16D1Z11MWC2	Micron Technology Inc.	LPDDR4 8G DIE 512MX16	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M16D1Z11MWC2 ES	Micron Technology Inc.	LPDDR4 8G DIE 512MX16	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53D8DBNW-DC	Micron Technology Inc.	LPDDR4 16G FBGA 8DP	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
EDF8164A3MC-GD-F-R TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 800MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	800MHz	-	-	Parallel	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDF8164A3MD-GD-F-R TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 800MHZ FBGA	Active	Volatile	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	800MHz	-	-	Parallel	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
MT25QL128ABB1EW7-CAUT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT25QL128ABB1EW7-CSIT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT25QL128ABB8E12-0AUT TR	Micron Technology Inc.	IC FLASH 128M SPI 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QL128ABB8ESF-0AUT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 16SOP2	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
MT25QU128ABB1EW7-CAUT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT25QU128ABB1EW7-CSIT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT25QU128ABB8E12-0AUT TR	Micron Technology Inc.	IC FLASH 128M SPI 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QU128ABB8ESF-0AUT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 16SOP2	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
MT29F128G08CBCEBJ4-37ES:E TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CBCEBJ4-37ITRES:E TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F1T08EEHAFJ4-3T:A TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F1T08EMCAGJ4-5M:A TR	Micron Technology Inc.	TLC 1T 128GX8 VBGA QDP	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08CECEBJ4-37ITRES:E TR	Micron Technology Inc.	MLC 256G 32GX8 VBGA IT DDP L05B	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBCAGJ4-5M:A TR	Micron Technology Inc.	TLC 256G 32GX8 VBGA	Active	-	-	-	-	-	-	-	-	-	-	-	-	-

Manufacturers for Memory