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Manufacturers for Memory

Adesto Technologies
AKM Semiconductor
Alliance Memory, Inc.
Cypress Semiconductor
Everspin Technologies, Inc.
Fremont Micro Devices
Fujitsu Electronics America, Inc.
GigaDevice
Honeywell Aerospace
Insignis Technology Corporation
Integrated Device Technology, Inc.
Integrated Silicon Solution, Inc. (ISSI)
Intel
Intersil (Renesas Electronics America)
Macronix
Maxim Integrated
Microchip Technology
Micron Technology
Nuvoton Technology Corporation America
NXP Semiconductors
ON Semiconductor
Panasonic
Parallax, Inc.
Qimonda
Renesas Electronics America
ROHM Semiconductor
SanDisk
Sharp Microelectronics
ABLIC U.S.A. Inc.
Socle Technology Corporation
STMicroelectronics
Swissbit
Texas Instruments
Toshiba Memory America, Inc.
Viking Technology
Winbond Electronics
Part Number Manufacturer / Brand Brife Description Part StatusMemory TypeMemory FormatTechnologyMemory SizeClock FrequencyWrite Cycle Time - Word, PageAccess TimeMemory InterfaceVoltage - SupplyOperating TemperatureMounting TypePackage / CaseSupplier Device Package
MTFC64GAPALNA-AIT
 Micron Technology Inc. EMMC 512G MMC5.1 J58X AT Active
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MTFC64GAPALNA-AIT ES
 Micron Technology Inc. EMMC 512G MMC5.1 J58X AT Active
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MTFC8GAMALBH-AAT ES
 Micron Technology Inc. IC FLASH 64G MMC ObsoleteNon-VolatileFLASHFLASH - NAND64Gb (8G x 8)
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MMC
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-40°C ~ 105°C (TA)
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MTFC8GAMALBH-AIT ES
 Micron Technology Inc. IC FLASH 64G MMC ObsoleteNon-VolatileFLASHFLASH - NAND64Gb (8G x 8)
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MMC
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-40°C ~ 85°C (TA)
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MTFC8GAMALNA-AAT ES
 Micron Technology Inc. IC FLASH 64G MMC ObsoleteNon-VolatileFLASHFLASH - NAND64Gb (8G x 8)
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MMC
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-40°C ~ 105°C (TA)
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MTFC8GAMALNA-AIT ES
 Micron Technology Inc. IC FLASH 64G MMC ObsoleteNon-VolatileFLASHFLASH - NAND64Gb (8G x 8)
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MMC
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-40°C ~ 85°C (TA)
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ECB130ABDCN-Y3
 Micron Technology Inc. LPDDR2 1G DIE 32MX32 Active
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ECB440ABBCN-Y3
 Micron Technology Inc. LPDDR2 4G DIE 128MX32 Active
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ECF440AACCN-V6-Y3
 Micron Technology Inc. LPDDR3 4G DIE 128MX32 Active
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ECF440AACCN-Y3
 Micron Technology Inc. LPDDR3 4G DIE 128MX32 Obsolete
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ECF620AAACN-C1-Y3
 Micron Technology Inc. LPDDR3 6G DIE 192MX32 Active
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ECF620AAACN-C1-Y3-ES
 Micron Technology Inc. LPDDR3 6G DIE 192MX32 Active
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ECF620AAACN-C2-Y3
 Micron Technology Inc. LPDDR3 6G DIE 192MX32 Active
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ECF620AAACN-C2-Y3-ES
 Micron Technology Inc. LPDDR3 6G DIE 192MX32 Active
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EDF8164A3MC-GD-F-R
 Micron Technology Inc. IC DRAM 8G PARALLEL 800MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR38Gb (128M x 64)800MHz
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Parallel1.14 V ~ 1.95 V-30°C ~ 85°C (TC)
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EDF8164A3MD-GD-F-R
 Micron Technology Inc. IC DRAM 8G PARALLEL 800MHZ FBGA ActiveVolatileDRAMSDRAM - Mobile LPDDR38Gb (128M x 64)800MHz
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Parallel1.14 V ~ 1.95 V-30°C ~ 85°C (TC)
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M29F400FB5AM6T2
 Micron Technology Inc. IC FLASH 4M PARALLEL 44SO ActiveNon-VolatileFLASHFLASH - NOR4Mb (512K x 8, 256K x 16)
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55ns55nsParallel4.5 V ~ 5.5 V-40°C ~ 85°C (TA)Surface Mount44-SOIC (0.496", 12.60mm Width)44-SO
MT25QL128QLHS8E3WC2-0AAT
 Micron Technology Inc. SLC 128M DIE 32MX4 Active
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MT29F128G08CBCEBL05B3WC1
 Micron Technology Inc. MLC 128G DIE 16GX8 Active
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MT29F128G08CBCEBL05B3WC1ES
 Micron Technology Inc. MLC 128G DIE 16GX8 Active
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MT29F128G08CBEBBL85C3WC1-R
 Micron Technology Inc. IC FLASH 128G PARALLEL DIE ActiveNon-VolatileFLASHFLASH - NAND128Gb (16G x 8)
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29F128G08CBECBL95B3WC1
 Micron Technology Inc. IC FLASH 128G PARALLEL DIE ActiveNon-VolatileFLASHFLASH - NAND128Gb (16G x 8)
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)Surface Mount
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MT29F128G08EBCDBB05A3WC1
 Micron Technology Inc. TLC 128G DIE 16GX8 Active
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MT29F128G08EBCDBB05A3WC1ES
 Micron Technology Inc. TLC 128G DIE 16GX8 Active
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MT29F128G08EBHDBB05A3WC1ES
 Micron Technology Inc. TLC 128G DIE 16GX8 Active
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MT29F16G08ABECBM72A3WC1P
 Micron Technology Inc. IC FLASH 16G PARALLEL DIE ActiveNon-VolatileFLASHFLASH - NAND16Gb (2G x 8)
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)Surface Mount
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MT29F1G08ABBEAM68M3WC1
 Micron Technology Inc. SLC 1G DIE 128MX8 Active
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MT29F256G08EBCAGB16A3WC1-M
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBCAGB16A3WC1-R
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBHAFB16A3WC1
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBHAFB16A3WC1-M
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBHAFB16A3WEA
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBHAFB16A3WSA
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F256G08EBHAFB16A3WTA
 Micron Technology Inc. TLC 256G DIE 32GX8 Active
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MT29F2G01ABAGDM79A3WC1
 Micron Technology Inc. SLC 2G DIE 2GX1 Active
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MT29F2G01ABBGDM79A3WC1
 Micron Technology Inc. SLC 2G DIE 2GX1 Active
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MT29F32G08ABEDBM83C3WC1
 Micron Technology Inc. SLC 32G DIE 4GX8 Active
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MT29F32G08CBADAL83A3WC1-M
 Micron Technology Inc. IC FLASH 32G PARALLEL ActiveNon-VolatileFLASHFLASH - NAND32Gb (4G x 8)
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29F4G08ABAEAM70M3WC1
 Micron Technology Inc. SLC 4G DIE 512MX8 Active
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MT29F4G08ABAFAM70A3WC1
 Micron Technology Inc. SLC 4G DIE 512MX8 Active
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MT29F4G16ABBFAM70A3WC1
 Micron Technology Inc. SLC 4G DIE 256MX16 Active
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MT29F64G08ABEBBM84C3WC1
 Micron Technology Inc. SLC 64G DIE 8GX8 Active
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MT29F64G08CBABAL84A3WC1
 Micron Technology Inc. MLC 64G DIE 8GX8 Active
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MT29F64G08CBABAL84A3WC1-M
 Micron Technology Inc. MLC 64G DIE 8GX8 Active
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MT29F64G08CBCGBL04A3WC1-R
 Micron Technology Inc. IC FLASH 64G PARALLEL DIE ActiveNon-VolatileFLASHFLASH - NAND64Gb (8G x 8)
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Parallel2.7 V ~ 3.6 V0°C ~ 70°C (TA)
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MT29F64G08CBEBBL84A3WC1
 Micron Technology Inc. MLC 64G DIE 8GX8 Active
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MT40A1G8Z01AWC1
 Micron Technology Inc. DDR4 8G DIE 1GX8 Active
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MT40A256M16Z90BWC1
 Micron Technology Inc. DDR4 4G DIE 256MX16 Active
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MT40A512M16Z01AWC1
 Micron Technology Inc. DDR4 8G DIE 512MX16 Active
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MT40A512M8Z90BWC1
 Micron Technology Inc. DDR4 4G DIE 512MX8 Active
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