다이오드 - 정류기 - 단일 - 이산 소자 반도체 제품 - 123SPD100A JANTX1N4500 JANS1N5806 JANS1N5806US - CHIPSIC

부품 번호	제조업체 / 브랜드	간단한 설명	부품 상태	다이오드 유형	전압 - 직류 역전 (Vr) (최대)	전류 - 평균 정류 (Io)	전압 - 순방향 (Vf) (최대) @ If	속도	역 회복 시간 (trr)	전류 - Vr의 역 누설	커패시턴스 @ Vr, F	실장 형	패키지 / 케이스	공급 업체 장치 패키지	작동 온도 - 정션
123SPD100A	SMC Diode Solutions	DIODE SCHOTTKY 100V 120A SPD-4	Active	Schottky	100V	120A	870mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 100V	2400pF @ 5V, 1MHz	Surface Mount	SPD-4	SPD-4	-55°C ~ 175°C
JANTX1N4500	Microsemi Corporation	DIODE GEN PURP 80V DO35	Active	Standard	80V	-	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANS1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANS1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANS1N6642	Microsemi Corporation	DIODE GEN PURP 75V 300MA DO204AH	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N6640	Microsemi Corporation	DIODE GEN PURP 50V 300MA DO204AH	Active	Standard	50V	300mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Discontinued at -	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N486B	Microsemi Corporation	DIODE GEN PURP 225V 200MA DO35	Active	Standard	225V	200mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	25nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANS1N3595US	Microsemi Corporation	DIODE GEN PURP 200MA DO35	Active	Standard	-	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
JANS1N5552	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
BAS16E6433HTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3	Last Time Buy	Standard	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
BAR74E6327HTSA1	Infineon Technologies	DIODE GEN PURP 50V 250MA SOT23-3	Last Time Buy	Standard	50V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
BAS116E6327HTSA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT23-3	Last Time Buy	Standard	80V	250mA (DC)	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
BAS21E6327HTSA1	Infineon Technologies	DIODE GEN PURP 200V 250MA SOT23	Last Time Buy	Standard	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
EGP30J	ON Semiconductor	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	75pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
BAT6402VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 250MA SC79-2	Active	Schottky	40V	250mA (DC)	750mV @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	2µA @ 30V	6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAT6202VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V SC79-2	Active	Schottky	40V	20mA (DC)	1V @ 2mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	0.6pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS3005A02VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2	Active	Schottky	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
IDM02G120C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 1200V 2A TO252-2	Active	Silicon Carbide Schottky	1200V	2A (DC)	1.65V @ 2A	No Recovery Time > 500mA (Io)	0ns	18µA @ 1200V	182pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-2	-55°C ~ 175°C
IDM08G120C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 1200V 8A TO252-2	Active	Silicon Carbide Schottky	1200V	8A (DC)	1.95V @ 8A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	365pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-2	-55°C ~ 175°C
IDM10G120C5XTMA1	Infineon Technologies	DIODE SCHTKY 1200V 38A PGTO252-2	Active	Silicon Carbide Schottky	1200V	38A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	62µA @ 12V	29pF @ 800V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-2	-55°C ~ 150°C
FFPF15S60STU	ON Semiconductor	DIODE GEN PURP 600V 15A TO220F	Active	Standard	600V	15A	2.6V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
STPS30100ST	STMicroelectronics	DIODE SCHOTTKY 100V 30A TO220AB	Active	Schottky	100V	30A	800mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	175µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	150°C (Max)
VS-30EPH03PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 30A TO247AC	Active	Standard	300V	30A	1.25V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	60µA @ 300V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
IDW30G65C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 30A TO247-3	Active	Silicon Carbide Schottky	650V	30A (DC)	1.7V @ 30A	No Recovery Time > 500mA (Io)	0ns	220µA @ 650V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
APTDF500U40G	Microsemi Corporation	DIODE GEN PURP 400V 500A LP4	Active	Standard	400V	500A	1.5V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	2.5mA @ 400V	-	Chassis Mount	LP4	LP4	-
UGE3126AY4	IXYS	DIODE GEN PURP 24KV 2A UGE	Active	Standard	24000V	2A	18V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	1mA @ 24000V	-	Chassis Mount	UGE	UGE	-
LL4148 L1G	Taiwan Semiconductor Corporation	DIODE GP 100V 150MA MINIMELF	Active	Standard	100V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	54ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
1N4003-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
BAS19,235	Nexperia USA Inc.	DIODE GEN PURP 100V 200MA SOT23	Active	Standard	100V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS19,215	Nexperia USA Inc.	DIODE GEN PURP 100V 200MA SOT23	Active	Standard	100V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS20,235	Nexperia USA Inc.	DIODE GEN PURP 150V 200MA SOT23	Active	Standard	150V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS20,215	Nexperia USA Inc.	DIODE GEN PURP 150V 200MA SOT23	Active	Standard	150V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS21,215	Nexperia USA Inc.	DIODE GEN PURP 200V 200MA SOT23	Active	Standard	200V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
BAS40-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 200MA SOT23	Active	Schottky	40V	200mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
BAW76	ON Semiconductor	DIODE GEN PURP 75V 300MA DO35	Last Time Buy	Standard	75V	300mA	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N916B	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
BAW62	ON Semiconductor	DIODE GEN PURP 75V 300MA DO35	Last Time Buy	Standard	75V	300mA	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
MR856G	ON Semiconductor	DIODE GEN PURP 600V 3A DO201AD	Active	Standard	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	10µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 125°C
1N5817-B	Diodes Incorporated	DIODE SCHOTTKY 20V 1A DO41	Active	Schottky	20V	1A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SL42-E3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 4A DO214AB	Active	Schottky	20V	4A	420mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
MBR1060	SMC Diode Solutions	DIODE SCHOTTKY 60V TO220AC	Active	Schottky	60V	-	800mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 60V	400pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
12TQ200	SMC Diode Solutions	DIODE SCHOTTKY 200V 15A TO220AC	Active	Schottky	200V	15A	920mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 200V	300pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-50WQ10FN-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 5.5A DPAK	Active	Schottky	100V	5.5A	770mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	183pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
19TQ015CJ	SMC Diode Solutions	DIODE SCHOTTKY 15V TO220AC	Active	Schottky	15V	-	360mV @ 19A	Fast Recovery =< 500ns, > 200mA (Io)	-	10.5mA @ 15V	2500pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 100°C
VT5202-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 5A TO220AC	Active	Schottky	200V	5A	880mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	1216pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
STTH5L06	STMicroelectronics	DIODE GEN PURP 600V 5A DO201AD	Active	Standard	600V	5A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
BYW29-200G	ON Semiconductor	DIODE GEN PURP 200V 8A TO220-2	Active	Standard	200V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
MUR815G	ON Semiconductor	DIODE GEN PURP 150V 8A TO220AC	Active	Standard	150V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
FFPF30UA60S	ON Semiconductor	DIODE GEN PURP 600V 30A TO220-2	Active	Standard	600V	30A	2.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C

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