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SMC Diode Solutions |
DIODE SCHOTTKY 100V 120A SPD-4 |
Active | Schottky | 100V | 120A | 870mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 100V | 2400pF @ 5V, 1MHz | Surface Mount | SPD-4 | SPD-4 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 80V DO35 |
Active | Standard | 80V | - | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 100nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL |
Active | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A |
Active | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 300MA DO204AH |
Active | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 300MA DO204AH |
Active | Standard | 50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL |
Discontinued at - | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO35 |
Active | Standard | 225V | 200mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200MA DO35 |
Active | Standard | - | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL |
Active | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
Last Time Buy | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 50V 250MA SOT23-3 |
Last Time Buy | Standard | 50V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
Last Time Buy | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 200V 250MA SOT23 |
Last Time Buy | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
Active | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 40V 250MA SC79-2 |
Active | Schottky | 40V | 250mA (DC) | 750mV @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 2µA @ 30V | 6pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V SC79-2 |
Active | Schottky | 40V | 20mA (DC) | 1V @ 2mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | 0.6pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2 |
Active | Schottky | 30V | 500mA (DC) | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO252-2 |
Active | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO252-2 |
Active | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHTKY 1200V 38A PGTO252-2 |
Active | Silicon Carbide Schottky | 1200V | 38A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 12V | 29pF @ 800V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220F |
Active | Standard | 600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220AB |
Active | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
Active | Standard | 300V | 30A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
Active | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 500A LP4 |
Active | Standard | 400V | 500A | 1.5V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 2.5mA @ 400V | - | Chassis Mount | LP4 | LP4 | - |
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IXYS |
DIODE GEN PURP 24KV 2A UGE |
Active | Standard | 24000V | 2A | 18V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 24000V | - | Chassis Mount | UGE | UGE | - |
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Taiwan Semiconductor Corporation |
DIODE GP 100V 150MA MINIMELF |
Active | Standard | 100V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 54ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | Mini MELF | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A DO41 |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE GEN PURP 100V 200MA SOT23 |
Active | Standard | 100V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Nexperia USA Inc. |
DIODE GEN PURP 100V 200MA SOT23 |
Active | Standard | 100V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Nexperia USA Inc. |
DIODE GEN PURP 150V 200MA SOT23 |
Active | Standard | 150V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Nexperia USA Inc. |
DIODE GEN PURP 150V 200MA SOT23 |
Active | Standard | 150V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Nexperia USA Inc. |
DIODE GEN PURP 200V 200MA SOT23 |
Active | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 200MA SOT23 |
Active | Schottky | 40V | 200mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 75V 300MA DO35 |
Last Time Buy | Standard | 75V | 300mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
Active | Standard | 100V | 200mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 75V 300MA DO35 |
Last Time Buy | Standard | 75V | 300mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
Active | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 1A DO41 |
Active | Schottky | 20V | 1A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 4A DO214AB |
Active | Schottky | 20V | 4A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 60V TO220AC |
Active | Schottky | 60V | - | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 60V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V 15A TO220AC |
Active | Schottky | 200V | 15A | 920mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 200V | 300pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
Active | Schottky | 100V | 5.5A | 770mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 183pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 15V TO220AC |
Active | Schottky | 15V | - | 360mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10.5mA @ 15V | 2500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 100°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 5A TO220AC |
Active | Schottky | 200V | 5A | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | 1216pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 5A DO201AD |
Active | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 200V 8A TO220-2 |
Active | Standard | 200V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 8A TO220AC |
Active | Standard | 150V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO220-2 |
Active | Standard | 600V | 30A | 2.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |