|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO214AC |
Active | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 50V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO214AC |
Active | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 100V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 200V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 200V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A DO204AL |
Active | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO214AC |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 1000V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO204AL |
Active | Standard | 600V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD123W |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SOD123W |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.2A SOD123HE |
Active | Standard | 1000V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
Active | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.5A DO214AC |
Active | Standard | 1000V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 1000V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC |
Active | Standard | 800V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SUB SMA |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 800V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SUB SMA |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 1000V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SOD123W |
Active | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
Active | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD123W |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 800MA SUB SMA |
Active | Standard | 50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 800MA SUBSMA |
Active | Standard | 100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
Active | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
Active | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD123W |
Active | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
Active | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 800V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
Active | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.2A SOD123HE |
Active | Standard | 1000V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC |
Active | Standard | 600V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO214AC |
Active | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC |
Active | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO214AC |
Active | Standard | 50V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
Active | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO214AC |
Active | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AC |
Active | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AC |
Active | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
Active | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.2A SOD123 |
Active | Standard | 600V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.2A SOD123HE |
Active | Standard | 1000V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A MICRO SMA |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 1µA @ 600V | 5pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A SOD123HE |
Active | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A SOD123W |
Active | Standard | 400V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SOD123HE |
Active | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123W |
Active | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |