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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AA |
Active | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A TO277A |
Active | Standard | 600V | 6A | 1.8V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO201AD |
Active | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
Active | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AB |
Not For New Designs | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 5A 60V DO-214AB |
Active | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO201AD |
Active | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
Active | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A DO214AB |
Not For New Designs | Standard | 100V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A TO277A |
Active | Standard | 200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A TO277A |
Active | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 5A DO214AB |
Active | Standard | 300V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO214AB |
Not For New Designs | Standard | 200V | 5A | 1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
Not For New Designs | Standard | 800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 5A DO214AB |
Active | Standard | 800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
Active | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 5A SMPC4.0 |
Active | Schottky | 120V | 5A | 740mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A SMPC4.0 |
Active | Schottky | 150V | 5A | 840mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 600V 3A TO277A |
Active | Avalanche | 600V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 200V 3A TO277A |
Active | Avalanche | 200V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 600V 3A TO277A |
Active | Avalanche | 600V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 400V 3A TO277A |
Active | Avalanche | 400V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 15A DO214AB |
Active | Standard | 1000V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 200V 3A TO277A |
Active | Avalanche | 200V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 200V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 400V 3A TO277A |
Active | Avalanche | 400V | 3A | 1.55V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 400V | 58pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 15A DO214AB |
Active | Standard | 1000V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 93pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AB |
Not For New Designs | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO214AB |
Not For New Designs | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 5A 150V DO-214AB |
Active | Schottky | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 5A 200V DO-214AB |
Active | Schottky | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 15A TO277A |
Active | Schottky | 150V | 15A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 15A TO277A |
Active | Schottky | 120V | 15A | 750mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 10A TO277A |
Active | Standard | 200V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
Active | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A TO277A |
Active | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO214AB |
Not For New Designs | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 15A TO277A |
Active | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A 8PDFN |
Active | Schottky | 60V | 20A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 15A SMPC4.0 |
Active | Schottky | 45V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 15A SMPC4.0 |
Active | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 25A 8PDFN |
Active | Schottky | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A SMPC4.0 |
Active | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 25A 8PDFN |
Active | Schottky | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A SMPC4.0 |
Active | Schottky | 45V | 10A | 460mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 8A ITO220AC |
Active | Standard | 1000V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
Active | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 10A ITO220AB |
Active | Standard | 300V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
Active | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 140pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AB |
Active | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 15A TO220AB |
Active | Schottky | 150V | 15A | 920mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |