品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Infineon Technologies IC MOSFET DRIVER LOW-SIDE 8-DIP ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET12 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting
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43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LOW SIDE 8DIP ActiveLow-SideSingle1IGBT, N-Channel MOSFET12 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting
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43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 8-DIP ObsoleteHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 8-DIP ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 16SOIC ObsoleteHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC DRIVER LIMITING 1CHAN 16-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC MOSFET DRIVER LIMITING 16SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC