Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Infineon Technologies IC MOSFET DRIVER LOW-SIDE 8-DIP ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET12 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting
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43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LOW SIDE 8DIP ActiveLow-SideSingle1IGBT, N-Channel MOSFET12 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting
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43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 8-DIP ObsoleteHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 8-DIP ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC MOSFET DRIVER LIMITING 16SOIC ObsoleteHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC DRIVER LIMITING 1CHAN 16-SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Infineon Technologies IC MOSFET DRIVER LIMITING 16SOIC ActiveHigh-SideSingle1IGBT, N-Channel MOSFET0 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting500V43ns, 26ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC