品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
ON Semiconductor IC HALF BRIDGE GATE DRIVER 8-SOP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 2.5V350mA, 650mANon-Inverting600V50ns, 30ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8SOIC ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
-
17ns, 17ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8SOIC ActiveLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
-
17ns, 17ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8DIP ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
-
17ns, 17ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8DIP ActiveLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
-
17ns, 17ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP