Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
ON Semiconductor IC HALF BRIDGE GATE DRIVER 8-SOP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 2.5V350mA, 650mANon-Inverting600V50ns, 30ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8SOIC ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
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17ns, 17ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8SOIC ActiveLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
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17ns, 17ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8DIP ObsoleteLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
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17ns, 17ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ON Semiconductor IC DRIVER GATE SINGLE IGBT 8DIP ActiveLow-SideSingle1IGBT, N-Channel MOSFET11 V ~ 20 V1.2V, 3.2V1A, 2AInverting
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17ns, 17ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP