品番 メーカー/ブランド 簡単な説明 部品ステータス駆動構成チャネルタイプドライバ数ゲートタイプ電圧 - 供給ロジック電圧 - VIL、VIH電流 - ピーク出力(ソース、シンク)入力方式ハイサイド電圧 - 最大(ブートストラップ)立ち上がり/立ち下がり時間(Typ)動作温度取付タイプパッケージ/ケースサプライヤデバイスパッケージ
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC MOSFET DRIVER ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4AInverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC