Número de pieza Fabricante / Marca Breve descripción Estado de la piezaConfiguración ImpulsadaTipo de canalCantidad de controladoresTipo de puertaSuministro de voltajeVoltaje lógico - VIL, VIHActual - Salida máxima (Fuente, Sumidero)Tipo de entradaAlto voltaje lateral - Máx. (Bootstrap)Tiempo de subida / bajada (Tipo)Temperatura de funcionamientoTipo de montajePaquete / cajaPaquete de dispositivo del proveedor
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 14SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
Infineon Technologies IC MOSFET DRIVER ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4AInverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI/LO SIDE 600V 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.5V4A, 4ANon-Inverting600V22ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC