Rise / Fall Time (Typ) is 7.5ns, 6.5ns - PMIC - Gate driver Distributor - IXDF602SI IXDI502SIAT/R IXDI602D2TR

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Configurazione guidata	Tipo di canale	Numero di driver	Gate Type	Tensione - Fornitura	Tensione logica - VIL, VIH	Corrente - Uscita picco (sorgente, lavello)	Tipo di input	Tensione lato alto - Max (Bootstrap)	Rise / Fall Time (Typ)	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
IXDF602SI	IXYS Integrated Circuits Division	2A 8SOIC EXP MTL DUAL IN/NON-INV	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI502SIAT/R	IXYS	IC MOSF DRVR FAST DUAL INV 8SOIC	Obsolete	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI602D2TR	IXYS Integrated Circuits Division	2A 8 DFN DUAL INVERTING	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDI602SIA	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN502PI	IXYS	IC MOSF DRIVER FAST DUAL 8-DIP	Obsolete	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN602PI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-DI	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN602SI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN602SIA	IXYS Integrated Circuits Division	DUAL LOW SIDE MOSFET DRIVER	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN602SIATR	IXYS Integrated Circuits Division	2A 8 LEAD SOIC DUAL NON INVERTIN	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

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