Rise / Fall Time (Typ) is 7.5ns, 6.5ns - Durée de conservation Distributor - IXDF602SI IXDI502SIAT/R IXDI602D2TR

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Configuration pilotée	Type de canal	Nombre de pilotes	Type de porte	Tension - Alimentation	Tension logique - VIL, VIH	Courant - sortie de crête (source, évier)	Type d'entrée	Tension latérale élevée - Max (Bootstrap)	Rise / Fall Time (Typ)	Température de fonctionnement	Type de montage	Paquet / cas	Package de périphérique fournisseur
IXDF602SI	IXYS Integrated Circuits Division	2A 8SOIC EXP MTL DUAL IN/NON-INV	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI502SIAT/R	IXYS	IC MOSF DRVR FAST DUAL INV 8SOIC	Obsolete	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI602D2TR	IXYS Integrated Circuits Division	2A 8 DFN DUAL INVERTING	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDI602SIA	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN502PI	IXYS	IC MOSF DRIVER FAST DUAL 8-DIP	Obsolete	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN602PI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-DI	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN602SI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN602SIA	IXYS Integrated Circuits Division	DUAL LOW SIDE MOSFET DRIVER	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN602SIATR	IXYS Integrated Circuits Division	2A 8 LEAD SOIC DUAL NON INVERTIN	Active	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

Fabricants pour Durée de conservation