Numero di parte Produttore / Marca Breve descrizione Stato parteConfigurazione guidataTipo di canaleNumero di driverGate TypeTensione - FornituraTensione logica - VIL, VIHCorrente - Uscita picco (sorgente, lavello)Tipo di inputTensione lato alto - Max (Bootstrap)Rise / Fall Time (Typ)temperatura di esercizioTipo di montaggioPacchetto / casoPacchetto dispositivo fornitore
Infineon Technologies IC GATE DRVR HI/LOW SIDE 10DFN ObsoleteHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 5.5 V0.8V, 1V2A, 2ANon-Inverting35V10ns, 8ns-40°C ~ 125°C (TJ)Surface Mount10-VFDFN Exposed Pad10-DFN (3x3)
Infineon Technologies IC GATE DRVR HI/LOW SIDE 10DFN ObsoleteHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 5.5 V0.8V, 1V2A, 2ANon-Inverting35V10ns, 8ns-40°C ~ 125°C (TJ)Surface Mount10-VFDFN Exposed Pad10-DFN (3x3)
Maxim Integrated IC MOSFET DVR NOTEBOOK ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.2 V ~ 5.5 V
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2A, 2.7ANon-Inverting24V10ns, 8ns-40°C ~ 150°C (TJ)Surface Mount8-WQFN Exposed Pad8-TQFN (3x3)
Maxim Integrated IC MOSFET DRIVER 8-TQFN ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.2 V ~ 5.5 V
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2.2A, 2.7ANon-Inverting
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10ns, 8ns-40°C ~ 150°C (TJ)Surface Mount8-WQFN Exposed Pad8-TQFN-EP
Maxim Integrated IC MOSFET DRIVER 8-TQFN Not For New DesignsHalf-BridgeSynchronous2N-Channel MOSFET4.2 V ~ 5.5 V
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2.2A, 2.7ANon-Inverting
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10ns, 8ns-40°C ~ 150°C (TJ)Surface Mount8-WQFN Exposed Pad8-TQFN-EP