Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - DSEI120-06A C3D16065A IDH20G65C6XKSA1 VS-1N1183A - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
DSEI120-06A	IXYS	DIODE GEN PURP 600V 77A TO247AD	Active	Standard	600V	77A	1.3V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	3mA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
C3D16065A	Cree/Wolfspeed	DIODE SCHOTTKY 650V 39A TO220-2	Active	Silicon Carbide Schottky	650V	39A (DC)	1.8V @ 16A	No Recovery Time > 500mA (Io)	0ns	95µA @ 650V	878pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
IDH20G65C6XKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 41A TO220-2	Active	Silicon Carbide Schottky	650V	41A (DC)	1.35V @ 20A	No Recovery Time > 500mA (Io)	0ns	67µA @ 420V	970pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
VS-1N1183A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 40A DO203AB	Active	Standard	50V	40A	1.3V @ 126A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
1N5712	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO35	Active	Schottky	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	150nA @ 16V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-16FL100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 16A DO203AA	Active	Standard	1000V	16A	1.4V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
SCS215AEC	Rohm Semiconductor	DIODE SILICON 650V 15A TO247	Active	Silicon Carbide Schottky	650V	15A	1.55V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	550pF @ 1V, 1MHz	Through Hole	TO-247-3	TO-247	175°C (Max)
1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
FJH1100	ON Semiconductor	DIODE GEN PURP 15V 150MA DO35	Active	Standard	15V	150mA (DC)	1.07V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10pA @ 15V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
CVFD20065A	Cree/Wolfspeed	DIODE SCHKY SIC 650V 20A TO-220	Active	Silicon Carbide Schottky	650V	57A (DC)	1.45V @ 20A	No Recovery Time > 500mA (Io)	0ns	80µA @ 650V	1100pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SCS220AGHRC	Rohm Semiconductor	DIODE SCHOTTKY 650V 20A TO-220-2	Active	Silicon Carbide Schottky	650V	20A (DC)	1.55V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	730pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STPSC40065CWY	STMicroelectronics	DIODE SCHOTTKY 650V 20A TO247	Active	Silicon Carbide Schottky	650V	20A	1.45V @ 20A	No Recovery Time > 500mA (Io)	0ns	300µA @ 650V	1250pF @ 0V, 1MHz	Through Hole	TO-247-3	TO-247	-40°C ~ 175°C
VS-60EPS16-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 60A TO247AC	Active	Standard	1600V	60A	1.15V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
CDLL5819	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 125°C
JANTX1N6642US	M/A-Com Technology Solutions	DIODE GEN PURP 75V 300MA D-5D	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100µA @ 75V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
VS-70HFR160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 70A DO203AB	Active	Standard, Reverse Polarity	1600V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
VS-80APS08PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 80A TO247AC	Active	Standard	800V	80A	1.17V @ 80A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
GP2D020A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 20A TO247-2	Active	Silicon Carbide Schottky	1200V	20A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	1270pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
123SPC100A	SMC Diode Solutions	DIODE SCHOTTKY 100V 120A SPD-3A	Active	Schottky	100V	120A	870mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 100V	3000pF @ 5V, 1MHz	Surface Mount	SPD-3A	SPD-3A	-55°C ~ 175°C
VS-60APF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC	Active	Standard	1200V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
MSC020SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 43A TO247	Active	Silicon Carbide Schottky	1200V	43A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	104pF @ 400V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
MSC030SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 30A TO247	Active	Silicon Carbide Schottky	1200V	30A (DC)	1.5V @ 30A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-2	TO-247	-
C4D15120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	43.5A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1200pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SCS220KGC	Rohm Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220AC	Active	Silicon Carbide Schottky	1200V	20A (DC)	1.6V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 1200V	1060pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
VS-123NQ100PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 120A D-67	Active	Schottky	100V	120A	910mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 100V	2650pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-55°C ~ 175°C
UES1106	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
UES1303	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	925mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	175°C (Max)
VS-150U120D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 150A DO205	Active	Standard	1200V	150A	1.47V @ 600A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 180°C
VS-T70HFL60S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 70A D-55	Active	Standard	600V	70A	-	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Chassis Mount	D-55 T-Module	D-55	-
VS-T110HF100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 110A D-55	Active	Standard	1000V	110A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 1000V	-	Chassis Mount	D-55 T-Module	D-55	-
1N4148-T26A	ON Semiconductor	DIODE GEN PURP 100V 200MA DO35	Active	Standard	100V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
FDLL914B	ON Semiconductor	DIODE GEN PURP 100V 200MA LL34	Active	Standard	100V	200mA	1V @ 5mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	175°C (Max)
CTS521,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2	Active	Schottky	30V	200mA	500mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 30V	25pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)
1N457TR	ON Semiconductor	DIODE GEN PURP 70V 200MA DO35	Active	Standard	70V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 60V	8pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
CES520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA ESC	Active	Schottky	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 30V	17pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
1N458ATR	ON Semiconductor	DIODE GEN PURP 150V 500MA DO35	Active	Standard	150V	500mA	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
DA3X101A0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA MINI3	Active	Standard	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 80V	1.2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	150°C (Max)
DA3X101K0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA MINI3	Active	Standard	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 80V	1.2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	150°C (Max)
SMBD001030TR	SMC Diode Solutions	DIODE SCHOTTKY 30V 10MA SOT23	Active	Schottky	30V	10mA	700mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200nA @ 25V	2pF @ 15V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
BAV19WSTR	SMC Diode Solutions	DIODE GEN PURP 100V 200MA SOD323	Active	Standard	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
1N5394-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 1.5A DO204AL	Active	Standard	300V	1.5A	1.4V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
CDSW4148-G	Comchip Technology	DIODE GEN PURP 75V 150MA SOD123	Active	Standard	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
BAS21M3T5G	ON Semiconductor	DIODE GEN PURP 250V 200MA SOT723	Active	Standard	250V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	SOT-723	SOT-723	-55°C ~ 150°C
BAV203-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD80	Active	Standard	200V	250mA	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
1N4934RLG	ON Semiconductor	DIODE GEN PURP 100V 1A DO41	Active	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
1N4935RLG	ON Semiconductor	DIODE GEN PURP 200V 1A DO41	Active	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 200V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
BAS16TR	SMC Diode Solutions	DIODE GEN PURP 75V 200MA SOT23	Active	Standard	75V	200mA	855mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
DB2J30900L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SMINI2	Active	Schottky	30V	100mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.3ns	2µA @ 30V	3pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	SMini2-F5-B	125°C (Max)
TBAT54,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 140MA SOT23	Active	Schottky	30V	140mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.5ns	2µA @ 25V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)

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