Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - VS-6TQ035PBF 1N4607 VS-20TQ035PBF RHRG1560-F085 - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
VS-6TQ035PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 6A TO220AC	Discontinued at -	Schottky	35V	6A	600mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
1N4607	Microsemi Corporation	DIODE GEN PURP 85V 200MA DO35	Active	Standard	85V	200mA	1.1V @ 400mA	Small Signal =< 200mA (Io), Any Speed	10ns	100µA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
VS-20TQ035PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 20A TO220AC	Discontinued at -	Schottky	35V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
RHRG1560-F085	ON Semiconductor	DIODE GEN PURP 600V 15A TO247-2	Active	Standard	600V	15A	2.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
STPS30M100SR	STMicroelectronics	DIODE SCHOTTKY 100V 30A I2PAK	Obsolete	Schottky	100V	30A	800mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	175µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	150°C (Max)
STPS20M100SFP	STMicroelectronics	DIODE SCHOTTKY 100V 20A TO220FP	Obsolete	Schottky	100V	20A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Through Hole	TO-220-3 Full Pack	TO-220FPAB	150°C (Max)
STPS20M100SR	STMicroelectronics	DIODE SCHOTTKY 100V 20A I2PAK	Active	Schottky	100V	20A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	150°C (Max)
STPS20M100ST	STMicroelectronics	DIODE SCHOTTKY 100V 20A TO220AB	Active	Schottky	100V	20A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	150°C (Max)
STTH30ST06GY-TR	STMicroelectronics	DIODE GEN PURP 600V 30A D2PAK	Active	Standard	600V	30A	3.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
VS-10ETS08FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 10A TO220FP	Obsolete	Standard	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
VS-10ETF10FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 10A TO220FP	Obsolete	Standard	1000V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	-	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
STTH2006W	STMicroelectronics	DIODE GEN PURP 600V 20A DO247	Obsolete	Standard	600V	20A	1.75V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	25µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
VS-10ETS12FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 10A TO220FP	Obsolete	Standard	1200V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
STTH12T06DI	STMicroelectronics	DIODE GEN PURP 600V 12A TO220AC	Active	Standard	600V	12A	2.95V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	20µA @ 600V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	-40°C ~ 175°C
STPS30M60SR	STMicroelectronics	DIODE SCHOTTKY 60V 30A I2PAK	Obsolete	Schottky	60V	30A	590mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	165µA @ 60V	-	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	150°C (Max)
ISL9R1560G2-F085	ON Semiconductor	DIODE GEN PURP 600V 15A TO247	Active	Standard	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 600V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GP2D006A065A	Global Power Technologies Group	DIODE SCHOTTKY 650V 6A TO220-2	Active	Silicon Carbide Schottky	650V	6A	1.65V @ 6A	No Recovery Time > 500mA (Io)	0ns	60µA @ 650V	316pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
STTH5R06DJF-TR	STMicroelectronics	DIODE GEN PURP 600V 5A POWERFLAT	Active	Standard	600V	5A	2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	60µA @ 600V	-	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)	175°C (Max)
VS-8TQ100SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A D2PAK	Discontinued at -	Schottky	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
STPSC10H065D	STMicroelectronics	DIODE SCHOTTKY 650V 10A TO220AC	Active	Silicon Carbide Schottky	650V	10A	1.75V @ 10A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	480pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-20ETF06SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A D2PAK	Discontinued at -	Standard	600V	20A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	100µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
STTH3002W	STMicroelectronics	DIODE GEN PURP 200V 30A DO247	Obsolete	Standard	200V	30A	1.05V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
1N1206AR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 12A DO4	Active	Standard, Reverse Polarity	600V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
DHG30I600HA	IXYS	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	2.36V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247 (HA)	-55°C ~ 150°C
GB02SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 2A TO220AC	Active	Silicon Carbide Schottky	1200V	2A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	138pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
STPSC12H065D	STMicroelectronics	DIODE SCHOTTKY 650V 12A TO220AC	Active	Schottky	650V	12A	1.75V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 650V	600pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
VS-20ETF06STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A D2PAK	Discontinued at -	Standard	600V	20A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	100µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
STTH3010GY-TR	STMicroelectronics	DIODE GEN PURP 1KV 30A D2PAK	Active	Standard	1000V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 1000V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D²PAK	-40°C ~ 175°C
1N3673AR	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV 12A DO4	Active	Standard, Reverse Polarity	1000V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
GP2D008A120C	Global Power Technologies Group	DIODE SCHTKY 1.2KV 24A TO252-2L	Active	Silicon Carbide Schottky	1200V	24A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	20µA @ 1200V	508pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-2L (DPAK)	-50°C ~ 175°C
1N3889	GeneSiC Semiconductor	DIODE GEN PURP 50V 12A DO4	Active	Standard	50V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
CSICD05-1200 TR13	Central Semiconductor Corp	DIODE SCHOTTKY 1.2KV 5A DPAK	Active	Silicon Carbide Schottky	1200V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	190µA @ 1200V	240pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
JANTX1N914UR	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N1188R	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 35A DO5	Active	Standard, Reverse Polarity	400V	35A	1.2V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
JAN1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N3613	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
FR30J02	GeneSiC Semiconductor	DIODE GEN PURP 600V 30A DO5	Active	Standard	600V	30A	1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
FR70G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 70A DO5	Active	Standard	400V	70A	1.4V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
JAN1N5806	Microsemi Corporation	DIODE GEN PURP 150V 2.5A AXIAL	Active	Standard	150V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N4248	Microsemi Corporation	DIODE GEN PURP 800V 1A E3	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	-	E3	E3	-65°C ~ 175°C
JAN1N5551	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N3957	Microsemi Corporation	DIODE GEN PURP 1KV 1A	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N6643US	Microsemi Corporation	DIODE GEN PURP 125V 300MA D5D	Active	Standard	125V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	50nA @ 20V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JANTX1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
TRS12E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 12A TO220-2L	Active	Silicon Carbide Schottky	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	90µA @ 170V	65pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
JANTX1N5553	Microsemi Corporation	DIODE GEN PURP 800V 5A AXIAL	Active	Standard	800V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5417US	Microsemi Corporation	DIODE GEN PURP 200V 3A D5B	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JANTX1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C

Produttori per Diodi - Raddrizzatori - Singoli