Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - UG06AHA0G UG06BHA0G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
UG06AHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 600MA TS-1	Active	Standard	50V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 50V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06BHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 600MA TS-1	Active	Standard	100V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG06CHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 600MA TS-1	Active	Standard	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RS3K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES2J M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS3A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR315HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD	Active	Schottky	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR320HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO201AD	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
UG2JAHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AC	Active	Standard	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	2µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES3A M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3C M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Not For New Designs	Standard	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DV M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Not For New Designs	Standard	150V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
RS3KHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 800V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR315HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD	Active	Schottky	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR320HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO201AD	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR315HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD	Active	Schottky	150V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR320HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A DO201AD	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES3A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3C V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3DV V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ESH3B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3C V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 3A DO214AB	Active	Standard	150V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 150V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ESH3D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
HS3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3F V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AB	Active	Standard	300V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3J V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES15GLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES15JLWHRVG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	600V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES2DVHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS3AHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3G V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Not For New Designs	Standard	-	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	10µA @ 1000V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MUR190 R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190 B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AC	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 175°C
MUR190AHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	Active	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
ES2HR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO214AA	Active	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS33 M6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO214AB	Not For New Designs	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS34 M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 40V 3A DO214AB	Not For New Designs	Standard	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
SS35 M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES3G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

Produttori per Diodi - Raddrizzatori - Singoli