Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - RS3G M6G RS3J M6G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
RS3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR302 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD	Active	Schottky	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR303 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR305 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO201AD	Active	Schottky	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR302 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD	Active	Schottky	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR303 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD	Active	Schottky	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR304 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD	Active	Schottky	40V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SR305 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 3A DO201AD	Active	Schottky	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SR306 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO201AD	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS3B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK115B M4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AA	Active	Schottky	150V	1A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2A M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	Active	Standard	50V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES15DLWHRQG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	200V	1.5A	950mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	24pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES15GLWHRQG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	21pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
ES15JLWHRQG	Taiwan Semiconductor Corporation	DIODE SUPER FAST	Active	Standard	600V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
HS3AB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	Active	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3BB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	Active	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3FB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO214AA	Active	Standard	300V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AA	Active	Standard	400V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA	Active	Standard	600V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5KBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AA	Active	Standard	800V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AA	Active	Standard	-	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3B M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3D M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3G M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3J M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3K M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3M M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Not For New Designs	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5MBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AA	Active	Standard	-	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3K V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3M V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Active	Standard	-	3A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3AHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3BHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3DHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Active	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3GHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3JHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3KHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S3MHM6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AB	Active	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

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