Numero di parte Produttore / Marca Breve descrizione Stato parteTipo FETTecnologiaDrain to Source Voltage (Vdss)Corrente - Scarico continuo (Id) @ 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (massimo)Capacità di ingresso (Ciss) (Max) @ VdsCaratteristica FETDissipazione di potenza (max)temperatura di esercizioTipo di montaggioPacchetto dispositivo fornitorePacchetto / caso
Infineon Technologies MOSFET N-CH 650V 16A TO-263 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V16A (Tc)10V199 mOhm @ 9.9A, 10V3.5V @ 660µA43nC @ 10V±20V1520pF @ 100V
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139W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO263-3-2TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 650V 22.4A TO-263 ActiveN-ChannelMOSFET (Metal Oxide)650V22.4A (Tc)10V150 mOhm @ 9.3A, 10V4.5V @ 900µA86nC @ 10V±20V2340pF @ 100V
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195.3W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 40V 46A DIRECTFETL8 ActiveN-ChannelMOSFET (Metal Oxide)40V46A (Ta), 270A (Tc)10V1 mOhm @ 160A, 10V4V @ 250µA330nC @ 10V±20V11880pF @ 25V
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3.8W (Ta), 125W (Tc)-55°C ~ 175°C (TJ)Surface MountDIRECTFET L8DirectFET™ Isometric L8
Infineon Technologies MOSFET P-CH 100V 38A D2PAK ActiveP-ChannelMOSFET (Metal Oxide)100V38A (Tc)10V60 mOhm @ 38A, 10V4V @ 250µA230nC @ 10V±20V2780pF @ 25V
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3.1W (Ta), 170W (Tc)-55°C ~ 150°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 560V 21A TO-263 Not For New DesignsN-ChannelMOSFET (Metal Oxide)560V21A (Tc)10V190 mOhm @ 13.1A, 10V3.9V @ 1mA95nC @ 10V±20V2400pF @ 25V
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208W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO263-3-2TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 800V 11A TO220 ActiveN-ChannelMOSFET (Metal Oxide)800V11A (Tc)10V450 mOhm @ 4.5A, 10V3.5V @ 220µA24nC @ 10V±20V770pF @ 500VSuper Junction29W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3FTO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 200V 43A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)200V43A (Tc)10V54 mOhm @ 26A, 10V5V @ 250µA91nC @ 10V±20V2900pF @ 25V
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3.8W (Ta), 300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 650V 10.6A TO220 ActiveN-ChannelMOSFET (Metal Oxide)650V10.6A (Tc)10V380 mOhm @ 3.2A, 10V3.5V @ 320µA39nC @ 10V±20V710pF @ 100V
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31W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-FPTO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 250V 45A D2PAK ActiveN-ChannelMOSFET (Metal Oxide)250V45A (Tc)10V48 mOhm @ 26A, 10V5V @ 250µA110nC @ 10V±30V4560pF @ 25V
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330W (Tc)-40°C ~ 175°C (TJ)Surface MountD²PAK (TO-263AB)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Infineon Technologies MOSFET N-CH 55V 75A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)55V75A (Tc)10V4.9 mOhm @ 75A, 10V4V @ 250µA180nC @ 10V±20V4780pF @ 25V
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230W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 60V 180A TO263-7 ActiveN-ChannelMOSFET (Metal Oxide)60V180A (Tc)4.5V, 10V1.6 mOhm @ 100A, 10V2.2V @ 196µA166nC @ 4.5V±20V28000pF @ 30V
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250W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-7TO-263-7, D²Pak (6 Leads + Tab)
Infineon Technologies MOSFET N-CH 80V 100A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)80V100A (Tc)6V, 10V3.75 mOhm @ 100A, 10V3.5V @ 155µA117nC @ 10V±20V8110pF @ 40V
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214W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 100V 120A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)100V120A (Tc)10V6 mOhm @ 75A, 10V4V @ 150µA170nC @ 10V±20V6860pF @ 50V
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250W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 600V 9.5A TO220-FP ActiveN-ChannelMOSFET (Metal Oxide)600V20.2A (Tc)10V190 mOhm @ 7.6A, 10V4.5V @ 630µ37nC @ 10V±20V1750pF @ 100V
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34W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-FPTO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 150V 83A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)150V85A (Tc)10V15 mOhm @ 33A, 10V5V @ 250µA110nC @ 10V±30V4460pF @ 50V
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350W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 800V 11A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)800V11A (Tc)10V450 mOhm @ 7.1A, 10V3.9V @ 680µA85nC @ 10V±20V1600pF @ 100V
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156W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3-1TO-220-3
Infineon Technologies MOSFET N-CH 200V 56A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)200V56A (Tc)10V40 mOhm @ 34A, 10V4V @ 250µA220nC @ 10V±20V4220pF @ 25V
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380W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 600V 11A TO220-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V11A (Tc)10V380 mOhm @ 7A, 10V3.9V @ 500µA60nC @ 10V±20V1200pF @ 25V
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33W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3-31 Full PackTO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 800V 11A TO-247 ActiveN-ChannelMOSFET (Metal Oxide)800V11A (Tc)10V450 mOhm @ 7.1A, 10V3.9V @ 680µA85nC @ 10V±20V1600pF @ 100V
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156W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 150V 104A TO220AB ActiveN-ChannelMOSFET (Metal Oxide)150V104A (Tc)10V11 mOhm @ 62A, 10V5V @ 250µA120nC @ 10V±20V5270pF @ 50V
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380W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 4VSON ActiveN-ChannelMOSFET (Metal Oxide)650V33A (Tc)10V75 mOhm @ 15.1A, 10V4.5V @ 760µA67nC @ 10V±20V2721pF @ 400V
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189W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-VSON-44-PowerTSFN
Infineon Technologies MOSFET N-CH 600V 23.8A TO220 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V23.8A (Tc)10V160 mOhm @ 11.3A, 10V3.5V @ 750µA75nC @ 10V±20V1660pF @ 100V
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176W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 650V 16A TO220-3 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V16A (Tc)10V199 mOhm @ 9.9A, 10V3.5V @ 660µA43nC @ 10V±20V1520pF @ 100V
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139W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 250V 46A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)250V46A (Tc)10V46 mOhm @ 26A, 10V5V @ 250µA110nC @ 10V±30V4560pF @ 25V
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330W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 650V 22.4A TO220 ActiveN-ChannelMOSFET (Metal Oxide)650V22.4A (Tc)10V150 mOhm @ 9.3A, 10V4.5V @ 900µA86nC @ 10V±20V2340pF @ 100V
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195.3W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 200V 76A TO-220AB ActiveN-ChannelMOSFET (Metal Oxide)200V76A (Tc)10V20 mOhm @ 44A, 10V5V @ 250µA150nC @ 10V±20V5380pF @ 50V
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375W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Infineon Technologies MOSFET N-CH 500V 23A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)550V23A (Tc)10V140 mOhm @ 14A, 10V3.5V @ 930µA64nC @ 10V±20V2540pF @ 100V
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192W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 600V 20.7A TO-220 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V20.7A (Tc)10V190 mOhm @ 13.1A, 10V3.9V @ 1mA114nC @ 10V±20V2400pF @ 25V
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208W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3-1TO-220-3
Infineon Technologies MOSFET N-CH 600V 30A TO220-FP Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V30A (Tc)10V125 mOhm @ 14.5A, 10V3.5V @ 960µA96nC @ 10V±20V2127pF @ 100V
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34W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-FPTO-220-3 Full Pack
Infineon Technologies MOSFET N-CH 120V 120A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)120V120A (Tc)10V4.1 mOhm @ 100A, 10V4V @ 270µA211nC @ 10V±20V13800pF @ 60V
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300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 700V 31.2A TO220 ActiveN-ChannelMOSFET (Metal Oxide)700V31.2A (Tc)10V110 mOhm @ 12.7A, 10V4.5V @ 1.3mA118nC @ 10V±20V3240pF @ 100V
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277.8W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 100V 120A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)100V120A (Tc)6V, 10V2.3 mOhm @ 100A, 10V3.8V @ 270µA210nC @ 10V±20V15600pF @ 50V
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375W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 900V 15A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)900V15A (Tc)10V340 mOhm @ 9.2A, 10V3.5V @ 1mA94nC @ 10V±20V2400pF @ 100V
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208W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 250V 93A TO-247AC ActiveN-ChannelMOSFET (Metal Oxide)250V93A (Tc)10V17.5 mOhm @ 56A, 10V5V @ 250µA270nC @ 10V±20V10880pF @ 50V
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520W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
Infineon Technologies MOSFET N-CH 600V 37.9A TO247 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V37.9A (Tc)10V99 mOhm @ 18.1A, 10V3.5V @ 1.21mA119nC @ 10V±20V2660pF @ 100V
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278W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 600V 48A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)600V48A (Tc)10V60 mOhm @ 15.9A, 10V4V @ 800µA67nC @ 10V±20V2895pF @ 400V
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164W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
Infineon Technologies MOSFET N-CH 600V 48A TO247-3 ActiveN-ChannelMOSFET (Metal Oxide)600V48A (Tc)10V60 mOhm @ 15.9A, 10V4V @ 800µA67nC @ 10V±20V2895pF @ 400V
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164W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 560V 32A TO-247 Not For New DesignsN-ChannelMOSFET (Metal Oxide)560V32A (Tc)10V110 mOhm @ 20A, 10V3.9V @ 1.8mA170nC @ 10V±20V4200pF @ 25V
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284W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 650V 31A TO-247 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V31A (Tc)10V99 mOhm @ 18A, 10V3.5V @ 1.2mA80nC @ 10V±20V2800pF @ 100V
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255W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 600V 57.7A TO220 Not For New DesignsN-ChannelMOSFET (Metal Oxide)600V57.7A (Tc)10V74 mOhm @ 21A, 10V3.5V @ 1.4mA138nC @ 10V±20V3020pF @ 100V
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480.8W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 650V 57.7A TO220 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V57.7A (Tc)10V74 mOhm @ 13.9A, 10V3.5V @ 1.4mA17nC @ 10V±20V3020pF @ 100V
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480.8W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-220-3TO-220-3
Infineon Technologies MOSFET N-CH 650V 76A TO247-3 ActiveN-ChannelMOSFET (Metal Oxide)650V76A (Tc)10V37 mOhm @ 29.5A, 10V4V @ 1.48mA121nC @ 10V±20V5243pF @ 400V
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255W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 600V TO247-3 ActiveN-ChannelMOSFET (Metal Oxide)650V63A (Tc)10V31 mOhm @ 32.6A, 10V4.5V @ 1.63mA141nC @ 10V±20V5623pF @ 400V
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278W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 650V 60A TO-247 Not For New DesignsN-ChannelMOSFET (Metal Oxide)650V60A (Tc)10V45 mOhm @ 44A, 10V3.5V @ 3mA190nC @ 10V±20V6800pF @ 100V
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431W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 900V 36A TO-247 ActiveN-ChannelMOSFET (Metal Oxide)900V36A (Tc)10V120 mOhm @ 26A, 10V3.5V @ 2.9mA270nC @ 10V±20V6800pF @ 100V
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417W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3TO-247-3
Infineon Technologies MOSFET N-CH 34V 9A 8TSDSON ActiveN-ChannelMOSFET (Metal Oxide)34V9A (Ta), 36A (Tc)4.5V, 10V12 mOhm @ 20A, 10V2V @ 250µA17nC @ 10V±20V1310pF @ 15V
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2.1W (Ta), 25W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-88-PowerTDFN
Infineon Technologies MOSFET N-CH 30V 44A TDSON-8 ActiveN-ChannelMOSFET (Metal Oxide)30V12A (Ta), 44A (Tc)4.5V, 10V10 mOhm @ 30A, 10V2V @ 250µA23nC @ 10V±20V1700pF @ 15V
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2.5W (Ta), 30W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-88-PowerTDFN
Infineon Technologies MOSFET N-CH 600V 0.09A SOT-89 ActiveN-ChannelMOSFET (Metal Oxide)600V90mA (Ta)4.5V, 10V45 Ohm @ 90mA, 10V2.3V @ 94µA5.8nC @ 10V±20V131pF @ 25V
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1W (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT89TO-243AA
Infineon Technologies MOSFET P-CH 30V 40A TSDSON-8 ActiveP-ChannelMOSFET (Metal Oxide)30V11A (Ta), 40A (Tc)6V, 10V12 mOhm @ 20A, 10V3.1V @ 73µA45nC @ 10V±25V3360pF @ 15V
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2.1W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-88-PowerTDFN
Infineon Technologies MOSFET N-CH 30V 50A 5X6 PQFN ActiveN-ChannelMOSFET (Metal Oxide)30V27A (Ta), 120A (Tc)4.5V, 10V3.1 mOhm @ 20A, 10V2.35V @ 50µA41nC @ 10V±20V3180pF @ 10V
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3.6W (Ta), 59W (Tc)-55°C ~ 150°C (TJ)Surface MountPQFN (5x6)8-PowerTDFN