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Infineon Technologies |
MOSFET N-CH 150V 4.9A DIRECTFET |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 4.9A (Ta), 28A (Tc) | 10V | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1411pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 1.4 mOhm @ 90A, 10V | 3.9V @ 150µA | 212nC @ 10V | ±20V | 6852pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8TDSON IND |
Active | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 0.95 mOhm @ 30A, 10V | 2V @ 250µA | 49nC @ 10V | ±16V | 3200pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 180A 2WDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Ta), 180A (Tc) | 4.5V, 10V | 1.4 mOhm @ 30A, 10V | 2V @ 250µA | 196nC @ 10V | ±20V | 16900pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.6 mOhm @ 50A, 10V | 2.8V @ 95µA | 71nC @ 10V | ±20V | 5200pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.6 mOhm @ 50A, 10V | 2V @ 85µA | 150nC @ 10V | ±20V | 12000pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 5.3 mOhm @ 90A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 100A TDSON-8 |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 25.4A (Ta), 100A (Tc) | 6V, 10V | 3 mOhm @ 50A, 10V | 3.1V @ 345µA | 186nC @ 10V | ±25V | 14000pF @ 15V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4 mOhm @ 50A, 10V | 3.8V @ 95µA | 72nC @ 10V | ±20V | 5300pF @ 50V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 9.5 mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2060pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 150V 56A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | 8V, 10V | 16 mOhm @ 28A, 10V | 4.6V @ 60µA | 23.1nC @ 10V | ±20V | 1820pF @ 75V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13 mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.7 mOhm @ 50A, 10V | 3.8V @ 72µA | 58nC @ 10V | ±20V | 4200pF @ 40V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 26A TO252-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 2.5 mOhm @ 90A, 10V | 2.8V @ 95µA | 71nC @ 10V | ±20V | 5200pF @ 30V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1 mOhm @ 50A, 10V | 2V @ 250µA | 95nC @ 10V | ±20V | 6800pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1160pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.8 mOhm @ 50A, 10V | 2.2V @ 93µA | 175nC @ 10V | ±20V | 13000pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 98A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 13.4A (Ta), 98A (Tc) | 10V | 7.7 mOhm @ 50A, 10V | 4V @ 110µA | 88nC @ 10V | ±20V | 5700pF @ 60V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Ta), 100A (Tc) | 6V, 10V | 4.7 mOhm @ 50A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4800pF @ 40V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V 25A |
Active | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310 mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 50A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 19 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 2420pF @ 75V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK |
Active | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 35A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 35A (Tc) | 10V | 35 mOhm @ 35A, 10V | 4V @ 90µA | 30nC @ 10V | ±20V | 2410pF @ 100V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Ta), 100A (Tc) | 6V, 10V | 4.6 mOhm @ 50A, 10V | 3.5V @ 120µA | 63nC @ 10V | ±20V | 4500pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 23A 8TDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 23A (Ta), 100A (Tc) | 6V, 10V | 2.6 mOhm @ 50A, 10V | 3.8V @ 115µA | 92nC @ 10V | ±20V | 6800pF @ 40V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5 mOhm @ 50A, 10V | 3.8V @ 115µA | 87nC @ 10V | ±20V | 6500pF @ 50V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V 25A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60 mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 40V 180A TO263-7 |
Active | P-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 2.4 mOhm @ 100A, 10V | 2.2V @ 410µA | 286nC @ 10V | ±16V | 18700pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 180A 2WDSON |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Ta), 180A (Tc) | 10V | 1.5 mOhm @ 30A, 10V | 4V @ 250µA | 142nC @ 10V | ±20V | 12000pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO263-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32 mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.6 mOhm @ 50A, 10V | 3.8V @ 110µA | 63.4nC @ 10V | ±20V | 4400pF @ 37.5V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 30A TDSON-8 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.45 mOhm @ 50A, 10V | 2.8V @ 120µA | 89nC @ 10V | ±20V | 6500pF @ 30V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO263 |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 11A D2PAK |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380 mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 1.9 mOhm @ 100A, 10V | 2.2V @ 196µA | 166nC @ 4.5V | ±20V | 28000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK7 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.25 mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9130pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 600V 21A D2PAK |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 15A 4VSON |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 130 mOhm @ 4.4A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 102W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK |
Active | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 3.5 mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5 mOhm @ 100A, 10V | 3.5V @ 275µA | 200nC @ 10V | ±20V | 14600pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190 mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20 mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220FP |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450 mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 120V 120A TO263-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 3.8 mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220-FP |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-220AB |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2.3 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO263 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
