Manufacturer Part NumberIPI041N12N3GAKSA1
Manufacturer / BrandInfineon Technologies
Available Quantity91830 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 120V 120A TO262-3
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPI041N12N3GAKSA1.pdf

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Part Number
IPI041N12N3GAKSA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
211nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13800pF @ 60V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Weight
Contact us
Application
Email for details
Replacement Part
IPI041N12N3GAKSA1

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