Manufacturer Part NumberIPD127N06LGBTMA1
Manufacturer / BrandInfineon Technologies
Available Quantity100680 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 60V 50A TO-252
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD127N06LGBTMA1.pdf

Please fill the below inquiry form, we will reply you the quotation for IPD127N06LGBTMA1 within 24 hours.

Part Number
IPD127N06LGBTMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 30V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
IPD127N06LGBTMA1

Related Components made by Infineon Technologies

Related Keywords For "IPD12"

Part Number Manufacturer Description
IPD122N10N3GATMA1 Infineon Technologies MOSFET N-CH 100V 59A
IPD122N10N3GBTMA1 Infineon Technologies MOSFET N-CH 100V 59A TO252-3
IPD127N06LGBTMA1 Infineon Technologies MOSFET N-CH 60V 50A TO-252
IPD12CN10NGATMA1 Infineon Technologies MOSFET N-CH 100V 67A TO252-3
IPD12CN10NGBUMA1 Infineon Technologies MOSFET N-CH 100V 67A TO252-3
IPD12CNE8N G Infineon Technologies MOSFET N-CH 85V 67A TO252-3
IPD12N03LB G Infineon Technologies MOSFET N-CH 30V 30A TO-252