IPB042N10N3GE8187ATMA1 Infineon Technologies Distributor
| Manufacturer Part Number | IPB042N10N3GE8187ATMA1 |
|---|---|
| Manufacturer / Brand | Infineon Technologies |
| Available Quantity | 56690 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET N-CH 100V 100A TO263-3 |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | IPB042N10N3GE8187ATMA1.pdf |
Please fill the below inquiry form, we will reply you the quotation for IPB042N10N3GE8187ATMA1 within 24 hours.
- Part Number
- IPB042N10N3GE8187ATMA1
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Rds On (Max) @ Id, Vgs
- 4.2 mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs
- 117nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 8410pF @ 50V
- FET Feature
-
- Power Dissipation (Max)
- 214W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- D²PAK (TO-263AB)
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- IPB042N10N3GE8187ATMA1
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Related Keywords For "IPB042N"
| Part Number | Manufacturer | Description |
|---|---|---|
| IPB042N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 70A TO-263-3 |
| IPB042N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 |
| IPB042N10N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 |