Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8-DIP ActiveHalf-BridgeIndependent2N-Channel MOSFET10 V ~ 20 V0.7V, 2.2V1A, 1AInverting200V35ns, 20ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies HI/LO SIDE DRVR 8SOIC ObsoleteHalf-BridgeIndependent2N-Channel MOSFET10 V ~ 20 V0.7V, 2.2V1A, 1AInverting200V35ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies HI/LO SIDE DRVR 8SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET10 V ~ 20 V0.7V, 2.2V1A, 1AInverting200V35ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies HI/LO SIDE DRVR 8SOIC ObsoleteHalf-BridgeIndependent2N-Channel MOSFET10 V ~ 20 V0.7V, 2.2V1A, 1AInverting200V35ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies HI/LO SIDE DRVR 8SOIC ActiveHalf-BridgeIndependent2N-Channel MOSFET10 V ~ 20 V0.7V, 2.2V1A, 1AInverting200V35ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC