Tensione logica - VIL, VIH is 0.7V, 2.2V - PMIC - Gate driver Distributor - IR2011PBF IR2011S IR2011SPBF

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Configurazione guidata	Tipo di canale	Numero di driver	Gate Type	Tensione - Fornitura	Tensione logica - VIL, VIH	Corrente - Uscita picco (sorgente, lavello)	Tipo di input	Tensione lato alto - Max (Bootstrap)	Rise / Fall Time (Typ)	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
IR2011PBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 8-DIP	Active	Half-Bridge	Independent	2	N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.2V	1A, 1A	Inverting	200V	35ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IR2011S	Infineon Technologies	HI/LO SIDE DRVR 8SOIC	Obsolete	Half-Bridge	Independent	2	N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.2V	1A, 1A	Inverting	200V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2011SPBF	Infineon Technologies	HI/LO SIDE DRVR 8SOIC	Active	Half-Bridge	Independent	2	N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.2V	1A, 1A	Inverting	200V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2011STR	Infineon Technologies	HI/LO SIDE DRVR 8SOIC	Obsolete	Half-Bridge	Independent	2	N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.2V	1A, 1A	Inverting	200V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2011STRPBF	Infineon Technologies	HI/LO SIDE DRVR 8SOIC	Active	Half-Bridge	Independent	2	N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.2V	1A, 1A	Inverting	200V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC