Rise / Fall Time (Typ) is 22ns, 15ns - Durée de conservation Distributor - IXDD609D2TR IXDD609SI IXDD609SIA

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Configuration pilotée	Type de canal	Nombre de pilotes	Type de porte	Tension - Alimentation	Tension logique - VIL, VIH	Courant - sortie de crête (source, évier)	Type d'entrée	Tension latérale élevée - Max (Bootstrap)	Rise / Fall Time (Typ)	Température de fonctionnement	Type de montage	Paquet / cas	Package de périphérique fournisseur
IXDD609D2TR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8DFN	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDD609SI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD609SIA	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD609SIATR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN609PI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8DIP	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN609SIATR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN609SITR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8SOIC	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP

Fabricants pour Durée de conservation