Hersteller-TeilenummerHS8K11TB
Hersteller / MarkeRohm Semiconductor
verfügbare Anzahl216320 Pieces
StückpreisQuote by Email ([email protected])
Kurze BeschreibungMOSFET 2N-CH 30V 7A/11A HSML
ProduktkategorieTransistoren - FETs, MOSFETs - Arrays
Bleifreier Status / RoHS-StatusLead free / RoHS Compliant
Feuchtigkeitsempfindlichkeitsstufe (MSL) 1 (Unlimited)
Lieferzeit1-2 Days
Datumscode (D / C)New
Datenblatt herunterladen HS8K11TB.pdf

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Artikelnummer
HS8K11TB
Produktionsstatus (Lebenszyklus)
Contact us
Hersteller lieferzeit
6-8 weeks
Bedingung
New & Unused, Original Sealed
Lieferweg
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Teilstatus
Active
FET Typ
2 N-Channel (Dual)
FET-Eigenschaft
Logic Level Gate
Drain auf Source-Spannung (Vdss)
30V
Strom - Dauerablass (Id) @ 25 ° C
7A, 11A
Rds Ein (Max) @ Id, Vgs
17.9 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id
2.5V @ 1mA
Gate Ladung (Qg) (Max) @ Vgs
11.1nC @ 10V
Eingangskapazität (Ciss) (Max) @ Vds
500pF @ 15V
Leistung max
2W
Betriebstemperatur
150°C (TJ)
Befestigungsart
Surface Mount
Paket / Fall
8-UDFN Exposed Pad
Lieferantengerätepaket
HSML3030L10
Gewicht
Contact us
Anwendung
Email for details
Ersatzteil
HS8K11TB

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